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quality N Channel MOSFET Slkor SL3134KL with Low Threshold Voltage and Halogen Free Lead Free Package Design factory
quality N Channel MOSFET Slkor SL3134KL with Low Threshold Voltage and Halogen Free Lead Free Package Design factory

N Channel MOSFET Slkor SL3134KL with Low Threshold Voltage and Halogen Free Lead Free Package Design

Key Attributes
Model Number: SL3134KL
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 N-channel
Output Capacitance(Coss):
13pF
Input Capacitance(Ciss):
79pF
Pd - Power Dissipation:
700mW
Mfr. Part #:
SL3134KL
Package:
DFN1006-3L
Product Description

Product Overview

This N-Channel Enhancement Mode MOSFET features advanced trench process technology, offering a low threshold voltage and fast switching speed. It is halogen-free, lead-free, and ESD protected up to 2KV (HBM). Ideal for load switching in portable devices and as a voltage-controlled small signal switch.

Product Attributes

  • Brand: SLKormicro
  • Model: SL3134KL
  • Package: DFN1006-3L
  • Certifications: Halogen-Free & Lead-Free
  • ESD Protection: up to 2KV (HBM)

Technical Specifications

ParameterSymbolValueUnitNotes
Absolute Maximum Ratings
Drain-Source VoltageVDS20V
Gate-Source VoltageVGS±12V
Continuous Drain CurrentID0.75A
Peak Drain Current, PulsedIDM1.8A1)
Power DissipationPtot0.7W2)
Operating Junction TemperatureTJ-55~150
Storage Temperature RangeTstg-55~150
Thermal Characteristics
Thermal Resistance from Junction to AmbientRθJA175/W2)
Static Parameters (at Ta = 25 unless otherwise specified)
Drain-Source Breakdown Voltage at ID = 250 µABVDSS20V
Drain-Source Leakage Current at VDS = 20 V, VGS = 0 VIDSS1.0µA
Gate Leakage Current at VGS = ± 10 VIGSS±10µA
Gate-Source Threshold Voltage at VDS = VGS, ID = 250 µAVGS(th)0.35 - 0.7 - 1.1V
Drain-Source On-State Resistance at VGS = 4.5 V, ID = 0.65ARDS(on)250 - 500mΩ
Drain-Source On-State Resistance at VGS = 2.5V, ID = 0.45 ARDS(on)300 - 700mΩ
Dynamic Parameters (at Ta = 25 unless otherwise specified)
Forward Transconductance at VDS = 5 V, ID = 0.15 Agfs15mS
Input Capacitance at VGS = 0 V, VDS = 16 V, f = 1 MHzCiss79pF
Output Capacitance at VGS = 0 V, VDS = 16 V, f = 1 MHzCoss13pF
Reverse Transfer Capacitance at VGS = 0 V, VDS = 16 V, f = 1 MHzCrss9pF
Gate charge total at VDS = 10 V, ID = 0.65 A, VGS = 4.5 VQg1.24nC
Gate to Source Charge at VDS = 10 V, ID = 0.65 A, VGS = 4.5 VQgs0.37nC
Gate to Drain Charge at VDS = 10 V, ID = 0.65 A, VGS = 4.5 VQgd0.27nC
Turn-On Delay Time at VGS = 4.5 V, VDS = 10 V, ID = 0.5 A, Rg = 10 Ωtd(on)6.7ns
Turn-On Rise Time at VGS = 4.5 V, VDS = 10 V, ID = 0.5 A, Rg = 10 Ωtr4.8ns
Turn-Off Delay Time at VGS = 4.5 V, VDS = 10 V, ID = 0.5 A, Rg = 10 Ωtd(off)17.3ns
Turn-Off Fall Time at VGS = 4.5 V, VDS = 10 V, ID = 0.5 A, Rg = 10 Ωtf7.4ns
Body-Diode Parameters
Drain-Source Diode Forward Voltage at IS = 0.15A, VGS = 0 VVSD1.2V
Body Diode Reverse Recovery Time at IF = 5.6 A, di/dt = 100 A / µstrr14ns
Body Diode Reverse Recovery Charge at IF =5.6A, di/dt = 100 A / µsQrr0.4nC
Notes
1)Pulse width ≤100us, duty cycle ≤1%, limited by Tjmax.
2)Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

2504211840_Slkor-SL3134KL_C48392751.pdf

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