Low Capacitance Switching Diode Taiwan Semiconductor MMBD4148CA RFG 200mA 100V for Lighting Adapters

Key Attributes
Model Number: MMBD4148CA RFG
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
4ns
Voltage - DC Reverse (Vr) (Max):
100V
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
820mV@10mA
Reverse Leakage Current (Ir):
5uA
Current - Rectified:
200mA
Mfr. Part #:
MMBD4148CA RFG
Package:
SOT-23
Product Description

Product Overview

The MMBD4148/CA/CC/SE is a 200mA, 100V switching diode from Taiwan Semiconductor, designed for surface mounting. It features low capacitance and a low forward voltage drop, making it suitable for various applications including switching mode power supplies, adapters, lighting, and on-board DC/DC converters. This product is moisture sensitivity level 1, RoHS compliant, and halogen-free.

Product Attributes

  • Brand: Taiwan Semiconductor
  • Certifications: RoHS Compliant, Halogen-free according to IEC 61249-2-21
  • Moisture Sensitivity Level: Level 1, per J-STD-020
  • Material: Molding compound meets UL 94 V-0 flammability rating
  • Terminal: Matte tin plated leads, solderable per J-STD-002
  • Whisker Test: Meet JESD 201 class 1A whisker test

Technical Specifications

ParameterSymbolValueUnitConditionsMarking Code
Repetitive peak reverse voltageVRRM100V
Forward currentIF200mA
Repetitive peak forward surge currentIFRM700mA
Non-repetitive peak forward surge current (t=1s)IFSM2A
Non-repetitive peak forward surge current (t=1s)IFSM1A
Junction temperature rangeTJ-55 to +150C
Storage temperature rangeTSTG-55 to +150C
Forward voltage per diodeVF0.82VIF = 10mA, TJ = 25C
Reverse current per diodeIR25nAVR = 20V ,TJ = 25C
Reverse current per diodeIR5AVR = 75V ,TJ = 25C
Reverse current per diodeIR50AVR = 20V ,TA = 150C
Reverse breakdown voltage per diodeVBR75VIR = 5A ,TJ = 25C
Reverse breakdown voltage per diodeVBR100VIR = 100A ,TJ = 25C
Junction capacitance per diodeCJ4pFf = 1MHz, VR = 0V
Reverse recovery time per diodetrr4nsIF = 10mA, IR = 1mA, RL = 100, VR = 6V
Junction-to-ambient thermal resistanceRJA357C/WTYP
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2202221130_Taiwan-Semiconductor-MMBD4148CA-RFG_C2977535.pdf

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