Switching diode Taiwan Semiconductor BAS21 RFG featuring fast recovery time and dissipation in SOT23
Key Attributes
Model Number:
BAS21 RFG
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
1A
Reverse Recovery Time (trr):
50ns
Pd - Power Dissipation:
225mW
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Diode Configuration:
-
Voltage - DC Reverse (Vr) (Max):
250V
Reverse Leakage Current (Ir):
100nA@200V
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAS21 RFG
Package:
SOT-23
Product Description
Product Overview
The BAS21 is a small signal, fast switching speed SMD switching diode designed for general-purpose applications. It features a surface mount device type in a SOT-23 plastic package, offering a Pb-free and RoHS compliant solution with a matte tin lead finish. This diode is suitable for applications requiring efficient switching and reliability.
Product Attributes
- Brand: Taiwan Semiconductor
- Device Type: SMD Switching Diode
- Package: SOT-23
- Lead Finish: Matte Tin (Sn) with Nickel (Ni) underplate
- Compliance: Pb free version and RoHS compliant
- Moisture Sensitivity Level: 1
- Green Compound: Yes (indicated by packing code suffix "G")
Technical Specifications
| Part Number | Repetitive Peak Reverse Voltage (VRRM) | Mean Forward Current (IO) | Power Dissipation (PD) | Reverse Breakdown Voltage (VR(BR)) | Forward Voltage (VF) | Reverse Leakage Current (IR) | Junction Capacitance (CJ) | Reverse Recovery Time (trr) |
| UNIT | V | mA | mW | V | V | A | pF | ns |
| BAS21 / A / C / S | 200 | 225 | 225 | 250 | 1.00 (IF=200mA) / 1.25 (IF=100mA) | 0.1 (VR=200V) | 5 (VR=1V, f=1MHz) | 50 (IF=30mA, IR=100A, IRR=1mA) |
2002251108_Taiwan-Semiconductor-BAS21-RFG_C486008.pdf
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