High current power switching N Channel MOSFET Slkor SL4468A with excellent heat dissipation package
Key Attributes
Model Number:
SL4468A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10.5A
Operating Temperature -:
-50℃~+150℃
RDS(on):
27mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 N-channel
Output Capacitance(Coss):
81pF
Pd - Power Dissipation:
2.5W
Input Capacitance(Ciss):
572pF
Gate Charge(Qg):
6.2nC@10V
Mfr. Part #:
SL4468A
Package:
SOP-8
Product Description
SL4468A N-Channel MOSFET
The SL4468A is an N-Channel MOSFET designed for power switching applications. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and an excellent package for good heat dissipation. This MOSFET is suitable for various power switching applications.
Product Attributes
- Brand: slkormicro
- Model: SL4468A
- Package: SOP-8
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Breakdown Voltage | VGS=0VID=250A | 30 | -- | -- | V |
| ID | Diode Continuous Forward Current | Tc=25C | -- | 10.5 | -- | A |
| IDM | Pulse Drain Current | Tc=25C | -- | 50 | -- | A |
| ID | Tested Continuous Drain Current | Tc=25C | -- | 10.5 | -- | A |
| TJ | Maximum Junction Temperature | -- | -- | 150 | C | |
| TSTG | Storage Temperature Range | -50 | -- | 155 | C | |
| PD | Maximum Power Dissipation | Tc=25C | -- | 2.5 | -- | W |
| RJA | Thermal Resistance Junction-Ambient | Mounted on Large Heat Sink | -- | 75 | -- | C/W |
| Static Electrical Characteristics | ||||||
| BV(BR)DSS | Drain-Source Breakdown Voltage | VGS=0VID=250A | 30 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=30VVGS=0V | -- | -- | 1.0 | A |
| IGSS | Gate-Body Leakage Current | VGS=20VVDS=0V | -- | -- | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGSID=250A | 1.0 | 1.5 | 2.5 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=10V ID=10.5A | -- | 14 | 19 | m |
| VGS=4.5VID=9A | -- | 20 | 27 | m | ||
| Dynamic Electrical Characteristics | ||||||
| CISS | Input Capacitance | VDS=15VVGS=0V f=1MHz | -- | 572 | -- | pF |
| COSS | Output Capacitance | VDS=15VVGS=0V f=1MHz | -- | 81 | -- | pF |
| CRSS | Reverse Transfer Capacitance | VDS=15VVGS=0V f=1MHz | -- | 65 | -- | pF |
| Qg | Total Gate Charge | VDD=15VID=10A VGS=10V | -- | 6.2 | -- | nC |
| Qgs | Gate Source Charge | VDD=15VID=10A VGS=10V | -- | 2.4 | -- | nC |
| Qgd | Gate Drain Charge | VDD=15VID=10A VGS=10V | -- | 2.5 | -- | nC |
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDD=30VID=10A VGS=10VRG=3 | -- | 3 | -- | nS |
| tr | Turn-on Rise Time | VDD=30VID=10A VGS=10VRG=3 | -- | 7.5 | -- | nS |
| td(off) | Turn-Off Delay Time | VDD=30VID=10A VGS=10VRG=3 | -- | 20 | -- | nS |
| tf | Turn-Off Fall Time | VDD=30VID=10A VGS=10VRG=3 | -- | 4 | -- | nS |
| VSD | Forward on voltage | Tj=25Is=10.5A | -- | 0.8 | 1.2 | V |
2408261717_Slkor-SL4468A_C41369464.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
