High Cell Density P Channel MOSFET Slkor SL4421 with Low RDS ON and Superior Heat Dissipation Design
Key Attributes
Model Number:
SL4421
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
8.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
165pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.85nF@25V
Pd - Power Dissipation:
4.1W
Gate Charge(Qg):
88nC@10V
Mfr. Part #:
SL4421
Package:
SOP-8
Product Description
Product Overview
This P-Channel MOSFET utilizes advanced trench technology and design to achieve excellent RDS(on) with low gate charge, making it suitable for a wide range of applications. It features a high cell density trench design for ultra-low RDS(ON) and an excellent package for efficient heat dissipation.
Product Attributes
- Brand: SLKORMicro
- Green device available
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Units |
| Electrical Characteristics | BVDSS | VGS=0V,ID=250A | -60 | V | ||
| IDSS | VGS=0V, VDS=-60V,TJ=25 | -1 | A | |||
| IDSS | VGS=0V, VDS=-48V,TJ=125 | -10 | A | |||
| IGSS | VGS=20V, VDS=0A | 100 | nA | |||
| VGS(th) | VGS=VDS, ID=250A | -1.6 | -2.5 | V | ||
| On Characteristics | RDS(ON) | VGS=-10V,ID=-8.5A | 23 | 30 | m | |
| RDS(ON) | VGS=-4.5V,ID=-6A | 28 | 40 | m | ||
| Dynamic Characteristics | Ciss | VDS=-25V, VGS=0V, f=1MHz | 2550 | 3850 | pF | |
| Coss | VDS=-25V, VGS=0V, f=1MHz | 160 | 230 | pF | ||
| Crss | VDS=-25V, VGS=0V, f=1MHz | 110 | 165 | pF | ||
| Switching Characteristics | td(on) | VDD=-30V, VGS=-10V ID=-1A,RGEN=6 | 25 | 50 | ns | |
| tr | VDD=-30V, VGS=-10V ID=-1A,RGEN=6 | 13.8 | 28 | ns | ||
| td(off) | VDD=-30V, VGS=-10V ID=-1A,RGEN=6 | 148 | 290 | ns | ||
| tf | VDD=-30V, VGS=-10V ID=-1A,RGEN=6 | 51 | 100 | ns | ||
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-5A | 43.8 | 88 | nC | |
| Qgs | VDS=-30V , VGS=-10V , ID=-5A | 4.6 | 9 | nC | ||
| Qgd | VDS=-30V , VGS=-10V , ID=-5A | 8.3 | 17 | nC | ||
| Drain-Source Diode Characteristics | IS | VG=VD=0V , Force Current | -8.5 | A | ||
| VSD | VGS=0V,IS=-1A, TJ=25 | -1 | V | |||
| Thermal Characteristics | RJA | Junction to Ambient | 62 | / W | ||
| RJC | Junction to Case | 30 | / W | |||
| Absolute Maximum Ratings | VDS | -60 | V | |||
| VGS | 20 | V | ||||
| ID | TC=25 | -8.5 | A |
2410122007_Slkor-SL4421_C5223654.pdf
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