High Current Gain NPN Silicon Epitaxial Planar Transistor Slkor BC817-25 for General AF Applications

Name: High Current Gain NPN Silicon Epitaxial Planar Transistor Slkor BC817-25 for General AF Applications
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BC817-25
Availability: InStock

Key Attributes

Model Number: BC817-25

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

100nA

DC Current Gain:

600@100mA,1V

Transition Frequency(fT):

100MHz

Vce Saturation(VCE(sat)):

700mV

Type:

NPN

Pd - Power Dissipation:

300mW

Current - Collector(Ic):

500mA

Collector - Emitter Voltage VCEO:

45V

Mfr. Part #:

BC817-25

Package:

SOT-23

Product Description

Product Overview

The BC817 is an NPN Silicon Epitaxial Planar Transistor designed for general AF applications. It offers a high collector current capability, high current gain, and a low collector-emitter saturation voltage. Complementary to the BC807 (PNP).

Product Attributes

Type: NPN Silicon Epitaxial Planar Transistor
Brand: slkormicro.com

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Collector-base breakdown voltage	VCBO	IC= 10A, IE=0		50	V
Collector-emitter breakdown voltage	VCEO	IC= 10mA, IB=0		45	V
Emitter-base breakdown voltage	VEBO	IE=1A, IC=0		5	V
Collector cut-off current	ICBO	VCB= 45 V, IE=0		0.1	A
Emitter cut-off current	IEBO	VEB=4V, IC=0		0.1	A
DC current gain (hFE(1))	hFE	VCE= 1V, IC= 100mA	100	600
DC current gain (hFE(2))	hFE	VCE= 1V, IC= 500mA	40
Collector-emitter saturation voltage	VCE(sat)	IC= 500mA, IB= 50mA		0.7	V
Base-emitter saturation voltage	VBE(sat)	IC= 500mA, IB= 50mA		1.2	V
Base-emitter voltage	VBE	VCE= 1 V, IC= 500mA		1.2	V
Collector capacitance	Cob	VCB=10V, f=1MHz		10	pF
Transition frequency	fT	VCE= 5 V, IC=10mA, f=100MHz		100	MHz

CLASSIFICATION OF hFE (1)

Rank	BC817-16	BC817-25	BC817-40
Range	100-250	160-400	250-600

SOT-23 Pinout

1. BASE
2. EMITTER
3. COLLECTOR

MAXIMUM RATINGS

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	50	V
VCEO	Collector-Emitter Voltage	45	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current	500	mA
PC	Collector Power Dissipation	300	mW
RJA	Thermal Resistance From Junction To Ambient	417	/W
Tj	Junction Temperature	150
Tstg	Storage Temperature	-55+150

SOT-23 Package Outline Dimensions

Symbol	Dimensions In Millimeters	Dimensions In Inches
A	0.900 - 1.150	0.035 - 0.045
A1	0.000 - 0.100	0.000 - 0.004
A2	0.900 - 1.050	0.035 - 0.041
b	0.300 - 0.500	0.012 - 0.020
c	0.080 - 0.150	0.003 - 0.006
D	2.800 - 3.000	0.110 - 0.118
E	1.200 - 1.400	0.047 - 0.055
E1	2.250 - 2.550	0.089 - 0.100
e	0.950 TYP	0.037 TYP
e1	1.800 - 2.000	0.071 - 0.079
L
L1	0.300 - 0.500	0.012 - 0.020
	0 - 8	0 - 8

2401051154_Slkor-BC817-25_C609807.pdf

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