Power MOSFET Slkor 2SK3018 N Channel Type Featuring SOT 23 Package for Circuit Electronics

Key Attributes
Model Number: 2SK3018
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.5Ω@10V;8Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@100uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
200mW
Gate Charge(Qg):
-
Mfr. Part #:
2SK3018
Package:
SOT-23
Product Description

Product Overview

The 2SK3018 is an N-Channel Power MOSFET designed for various electronic applications. It offers specific electrical characteristics and thermal properties suitable for power management and switching circuits.

Product Attributes

  • Brand: slkormicro
  • Model: 2SK3018
  • Package: SOT-23

Technical Specifications

Characteristic Symbol Min Typ Max Unit Notes
Drain-Source Breakdown Voltage BVDSS 30 V (ID =10uA,VGS=0V)
Gate Threshold Voltage VGS(th) 0.8 2 V (ID =100uA,VGS= VDS)
Drain-Source On Voltage VDS(ON) 0.375 V (ID=50mA,VGS=5V)
Drain-Source On Voltage VDS(ON) 3.75 V (ID =400mA,VGS=10V)
Diode Forward Voltage Drop VSD 1.5 V (ISD=200mA,VGS=0V)
Zero Gate Voltage Drain Current IDSS 1 uA (VGS=0V, VDS= BVDSS)
Zero Gate Voltage Drain Current IDSS 500 uA (VGS=0V, VDS=0.8BVDSS, TA=125)
Gate Body Leakage IGSS +100 nA (VGS=+20V, VDS=0V)
Static Drain-Source On-State Resistance RDS(ON) 8 (ID=50mA,VGS=4.5V)
Static Drain-Source On-State Resistance RDS(ON) 7.5 (ID=400mA,VGS=10V)
Input Capacitance CISS 50 pF (VGS=0V, VDS=25V,f=1MHz)
Common Source Output Capacitance COSS 25 pF (VGS=0V, VDS=25V,f=1MHz)
Turn-ON Time t(on) 20 ns (VDS=30V, ID=200mA, RGEN=25)
Turn-OFF Time t(off) 40 ns (VDS=30V, ID=200mA, RGEN=25)
Reverse Recovery Time trr 400 ns (ISD=800mA, VGS=0V)
Drain-Source Voltage (Max) BVDSS 30 V
Gate-Source Voltage (Max) VGS +20 V
Drain Current (continuous) IDR 100 mA
Drain Current (pulsed) IDRM 400 mA
Total Device Dissipation PD 200 mW TA=25
Derate above 25 PD 1.8 mW/
Thermal Resistance Junction to Ambient RJA 417 /W
Junction and Storage Temperature TJ,Tstg -55 150

2101081835_Slkor-2SK3018_C2681369.pdf

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