N Channel Enhancement Mode MOSFET Slkor NTR4003N with Low Input Capacitance and Fast Switching Speed
Key Attributes
Model Number:
NTR4003N
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
560mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5Ω@3.7V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6.5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
17.5pF@25V
Pd - Power Dissipation:
690mW
Gate Charge(Qg):
2.4nC@10V
Mfr. Part #:
NTR4003N
Package:
SOT-23
Product Description
Product Overview
N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. This voltage-controlled small signal switch offers low input capacitance, fast switching speed, and low input/output leakage. It is suitable for battery-operated systems, solid-state relays, and direct logic-level interface with TTL/CMOS.
Product Attributes
- Brand: SLKORMicro
- Model: NTR4003N
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 30 | V | |||
| Gate-source Voltage | VGS | 20 | V | |||
| Drain Current | ID | @ TA=25 | 560 | mA | ||
| Pulsed Drain Current | IDM | 1.7 | A | |||
| Total Power Dissipation | PD | @ TA=25 | 690 | mW | ||
| Thermal Resistance Junction-to-Ambient | RJA | @ Steady State | 357 | / W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS1 | VGS= 20V, VDS=0V | 1 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 0.8 | 1.6 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=10mA | 1.5 | |||
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 3.7V, ID=10mA | 2.5 | |||
| Diode Forward Voltage | VSD | IS=300mA,VGS=0V | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 100 | mA | |||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHZ | 17.5 | pF | ||
| Output Capacitance | Coss | VDS=25V,VGS=0V,f=1MHZ | 11.5 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V,f=1MHZ | 6.5 | pF | ||
| Total Gate Charge | Qg | VGS=10V,VDS=25V,ID=0.3A | 1.7 | 2.4 | nC | |
| Turn-on Delay Time | tD(on) | VGS=10V,VDD=25V, ID=100mA, RGEN=6 | 5 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=10V,VDD=25V, ID=100mA, RGEN=6 | 17 | ns | ||
| Reverse recovery Time | trr | VGS=0V,IS=300mA,VR=25V, dIS/dt=- 100A/s | 30 | ns | ||
2201201800_Slkor-NTR4003N_C2965527.pdf
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