High Current Capability N-Channel Power MOSFET Slkor SL2308 with Compact SOT23-3 Package and Loss

Key Attributes
Model Number: SL2308
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
1.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
200mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Input Capacitance(Ciss):
295pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
3.9nC@4.5V
Mfr. Part #:
SL2308
Package:
SOT-23
Product Description

Product Overview

The SL2308 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density advanced trench technology. This technology minimizes on-state resistance, making it ideal for low-voltage applications requiring low in-line power loss in a compact SOT23-3 surface mount package. It offers exceptional on-resistance and maximum DC current capability.

Product Attributes

  • Brand: UniverChip Semiconductor
  • Certifications: Full RoHS compliance
  • Package: SOT23-3

Technical Specifications

SymbolParameterConditionMinTypMaxUnit
Static ParametersDrain-Source Breakdown VoltageVGS=0V, ID=250uA60V
Gate Threshold VoltageVDS=VGS, ID=250uA1.02V
Gate Leakage CurrentVDS=0V, VGS=12V100nA
Zero Gate Voltage Drain CurrentVDS=44V, VGS=01uA
Zero Gate Voltage Drain CurrentVDS=44V, VGS=0 TJ=855uA
On-State Drain CurrentVDS5V, VGS=4.5V10A
Drain-Source On-ResistanceVGS=10V, ID=1.8A15m
VGS=10V, ID=1.5A15.4m
VGS=4.5V, ID=1.8A20m
VGS=4.5V, ID=1.5A21m
Forward TransconductanceVDS=5V, ID=10A154m
Source-Drain DiodeDiode Forward VoltageIS=1.8A, VGS=0V0.8V
Diode Forward VoltageIS=1.5A, VGS=0V0.8V
Dynamic ParametersTotal Gate ChargeVDS=27V, ID=2.1A, VGS=4.5V3.9nC
Input CapacitanceVDS=27V, VGS=0V f=1MHz295pF
Output Capacitance154pF
Reverse Transfer CapacitanceVDS=27V, VGS=0V f=1MHz13.5pF
Switching CharacteristicsTurn-On TimeVDS=27V, ID=2.1A, VGS=4.5V RL=10 VGEN=4.5V RG=63.6nS
Turn-On Time
Turn-Off Time32nS
Turn-Off Time

Applications

  • Power Management in Notebook
  • Portable Equipment
  • Battery Powered System

Absolute Maximum Ratings

SymbolParameterTypicalUnit
VDSSDrain-Source Voltage60V
VGSSGate-Source Voltage20V
IDContinuous Drain Current (TJ=150) VGS-4.5V1.8A
IDMPulsed Drain Current10A
ISContinuous Source Current (Diode Conduction)1A
PDPower Dissipation TA=251.25W
TJOperation Junction Temperature150
TSTGStorage Temperature Range-55~+150

Thermal Data

SymbolParameterMinTypMaxUnit
RJAThermal Resistance-Junction to Ambient62.5125/W

2111122130_Slkor-SL2308_C2918940.pdf

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