High Current Capability N-Channel Power MOSFET Slkor SL2308 with Compact SOT23-3 Package and Loss
Product Overview
The SL2308 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density advanced trench technology. This technology minimizes on-state resistance, making it ideal for low-voltage applications requiring low in-line power loss in a compact SOT23-3 surface mount package. It offers exceptional on-resistance and maximum DC current capability.
Product Attributes
- Brand: UniverChip Semiconductor
- Certifications: Full RoHS compliance
- Package: SOT23-3
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Static Parameters | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 60 | V | ||
| Gate Threshold Voltage | VDS=VGS, ID=250uA | 1.0 | 2 | V | ||
| Gate Leakage Current | VDS=0V, VGS=12V | 100 | nA | |||
| Zero Gate Voltage Drain Current | VDS=44V, VGS=0 | 1 | uA | |||
| Zero Gate Voltage Drain Current | VDS=44V, VGS=0 TJ=85 | 5 | uA | |||
| On-State Drain Current | VDS5V, VGS=4.5V | 10 | A | |||
| Drain-Source On-Resistance | VGS=10V, ID=1.8A | 15 | m | |||
| VGS=10V, ID=1.5A | 15.4 | m | ||||
| VGS=4.5V, ID=1.8A | 20 | m | ||||
| VGS=4.5V, ID=1.5A | 21 | m | ||||
| Forward Transconductance | VDS=5V, ID=10A | 154 | m | |||
| Source-Drain Diode | Diode Forward Voltage | IS=1.8A, VGS=0V | 0.8 | V | ||
| Diode Forward Voltage | IS=1.5A, VGS=0V | 0.8 | V | |||
| Dynamic Parameters | Total Gate Charge | VDS=27V, ID=2.1A, VGS=4.5V | 3.9 | nC | ||
| Input Capacitance | VDS=27V, VGS=0V f=1MHz | 295 | pF | |||
| Output Capacitance | 154 | pF | ||||
| Reverse Transfer Capacitance | VDS=27V, VGS=0V f=1MHz | 13.5 | pF | |||
| Switching Characteristics | Turn-On Time | VDS=27V, ID=2.1A, VGS=4.5V RL=10 VGEN=4.5V RG=6 | 3.6 | nS | ||
| Turn-On Time | ||||||
| Turn-Off Time | 32 | nS | ||||
| Turn-Off Time |
Applications
- Power Management in Notebook
- Portable Equipment
- Battery Powered System
Absolute Maximum Ratings
| Symbol | Parameter | Typical | Unit |
| VDSS | Drain-Source Voltage | 60 | V |
| VGSS | Gate-Source Voltage | 20 | V |
| ID | Continuous Drain Current (TJ=150) VGS-4.5V | 1.8 | A |
| IDM | Pulsed Drain Current | 10 | A |
| IS | Continuous Source Current (Diode Conduction) | 1 | A |
| PD | Power Dissipation TA=25 | 1.25 | W |
| TJ | Operation Junction Temperature | 150 | |
| TSTG | Storage Temperature Range | -55~+150 |
Thermal Data
| Symbol | Parameter | Min | Typ | Max | Unit |
| RJA | Thermal Resistance-Junction to Ambient | 62.5 | 125 | /W |
2111122130_Slkor-SL2308_C2918940.pdf
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