Full Wave Bridge Rectifier TOS MB10F-46 Featuring Low Reverse Leakage and RoHS Compliant Materials
Key Attributes
Model Number:
MB10F-46
Product Custom Attributes
Mfr. Part #:
MB10F-46
Package:
MBF
Product Description
Product Overview
The MBF series plastic-encapsulated bridge rectifiers are designed for general-purpose AC/DC full-wave rectification. Featuring glass-passivated chips, these rectifiers offer low reverse leakage current and high surge current capability. Their reliable, low-cost construction utilizes molded plastic techniques and meets UL 94V-0 flammability rating. RoHS-compliant and solderable per MIL-STD-750, they are suitable for various applications requiring efficient rectification.
Product Attributes
- Brand: XILONG
- Origin: China (implied by www.xilongsemi.com and Chinese text)
- Material: Molded plastic
- Certifications: UL 94V-0 flammability rating, RoHS-compliant
- Solderability: Solder plated, solderable per MIL-STD-750, Method 2026
Technical Specifications
| Parameter | Symbol | Unit | MB05F | MB1F | MB2F | MB4F | MB6F | MB8F | MB10F |
| Repetitive peak reverse voltage | VRRM | V | 50 | 100 | 200 | 400 | 600 | 800 | 1000 |
| Maximum RMS voltage | VRMS | V | 35 | 70 | 140 | 280 | 420 | 560 | 700 |
| Maximum DC blocking Voltage | VDC | V | 50 | 100 | 200 | 400 | 600 | 800 | 1000 |
| Maximum average output current @ 60Hz sine wave, resistance load | IF(AV) | A | 0.8 | ||||||
| Peak forward surge current 8.3 ms single half sine wave superimposed on rated load | IFSM | A | 30 | ||||||
| Peak forward surge current 1.0 ms single half sine wave superimposed on rated load | A | 60 | |||||||
| Current squared time @ 1mst<8.3ms Tj=25, Rating of per diode | It | AS | 3.74 | ||||||
| Storage temperature | Tstg | -55~+150 | |||||||
| Junction temperature | Tj | -55~+150 | |||||||
| Maximum instantaneous forward voltage @ IF=0.4A | VF | V | 1.0 | ||||||
| Maximum DC reverse current @ rated DC blocking voltage, VR=VDC, Tj=25 | IR | A | 5 | ||||||
| Maximum DC reverse current @ rated DC blocking voltage, VR=VDC, Tj=100 | IR | A | 100 | ||||||
2511251715_TOS-MB10F-46_C52750548.pdf
Related Products
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
