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quality High gain NPN transistor Slkor 2SC1815 suitable for amplification and switching in electronic devices factory
quality High gain NPN transistor Slkor 2SC1815 suitable for amplification and switching in electronic devices factory

High gain NPN transistor Slkor 2SC1815 suitable for amplification and switching in electronic devices

Key Attributes
Model Number: 2SC1815
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Transition Frequency(fT):
80MHz
Type:
NPN
Vce Saturation(VCE(sat)):
250mV@100mA,10mA
Pd - Power Dissipation:
400mW
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
2SC1815
Package:
TO-92
Product Description

Product Overview

The 2SC1815 is a general-purpose NPN bipolar junction transistor designed for a wide range of applications. It offers a high DC current gain (hFE) and is suitable for amplification and switching circuits. The transistor is available in different ranks (O, Y, GR, BL) to cater to specific gain requirements. Its robust performance and electrical characteristics make it a reliable component in various electronic designs.

Product Attributes

  • Brand: SLKORmicro
  • Model: 2SC1815
  • Type: NPN Bipolar Junction Transistor

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 100uA, IE = 0 60 V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 0.1mA, IB = 0 50 V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 100uA, IC = 0 5 V
Collector Cut-off Current ICBO VCB = 60V, IE = 0 0.1 uA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 0.1 uA
DC Current Gain hFE VCE = 6V, IC = 2mA 70 700
Collector-Emitter Saturation Voltage VCE(sat) IC = 100mA, IB = 10mA 0.25 V
Base-Emitter Saturation Voltage VBE(sat) IC = 100mA, IB = 10mA 1 V
Transition Frequency fT VCE = 10V, IC = 1mA, f = 30MHz 80 MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz 3.5 pF
Noise Figure NF VCE = 6V, IC = 0.1mA, f = 1KHz, RG = 10K 10 dB
Operation Junction and Storage Temperature Range TJ, Tstg -55 150 C
Collector Power Dissipation PC Ta = 25C 400 mW
Collector Current - Continuous IC 0.15 A
Collector-Base Voltage VCB 60 V
Collector-Emitter Voltage VCE 50 V
Emitter-Base Voltage VEB 5 V
hFE Rank O Range 70 140
hFE Rank Y Range 120 240
hFE Rank GR Range 200 400
hFE Rank BL Range 350 700

Note: Test conditions are at Ta = 25C unless otherwise specified.


2410010403_Slkor-2SC1815_C2936035.pdf

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