Sink type DMOS transistor array 7 channel TOSHIBA TBD62503AFNGZEL designed for high current circuits
Key Attributes
Model Number:
TBD62503AFNG(Z,EL)
Product Custom Attributes
Current - Collector(Ic):
300mA
Collector - Emitter Voltage VCEO:
-
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
TBD62503AFNG(Z,EL)
Package:
SSOP-16
Product Description
TBD62502A/TBD62503A Series 7-Channel Sink Type DMOS Transistor Array
The TBD62502A and TBD62503A series are 7-circuit sink type DMOS transistor arrays designed for high voltage and high current applications. These devices offer versatile input voltage characteristics suitable for different driving requirements. They are available in various package types, including DIP, SOP, SSOP, and P-SOP, catering to different board space and mounting needs. Careful consideration of thermal conditions during use is recommended.
Product Attributes
- Brand: TOSHIBA
- Origin: Silicon Monolithic
Technical Specifications
| Series | Package Type | Package | Weight (Typ.) | Output Voltage (MAX) | Output Current (MAX) | Input Voltage (Output ON) MIN | Input Voltage (Output OFF) MAX |
| TBD62502A / TBD62503A | PG | DIP16-P-300-2.54A | 1.11g | 50 V | 300 mA/ch | TBD62502A: 14 V TBD62503A: 2.5 V | TBD62502A: 7.0 V TBD62503A: 0.6 V |
| TBD62502A / TBD62503A | FG | SOP16-P-225-1.27 | 0.16g | 50 V | 300 mA/ch | TBD62502A: 14 V TBD62503A: 2.5 V | TBD62502A: 7.0 V TBD62503A: 0.6 V |
| TBD62502A / TBD62503A | FNG | SSOP16-P-225-0.65B | 0.07g | 50 V | 300 mA/ch | TBD62502A: 14 V TBD62503A: 2.5 V | TBD62502A: 7.0 V TBD62503A: 0.6 V |
| TBD62502A / TBD62503A | FWG | P-SOP16-0410-1.27-002 | 0.15g | 50 V | 300 mA/ch | TBD62502A: 14 V TBD62503A: 2.5 V | TBD62502A: 7.0 V TBD62503A: 0.6 V |
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
| Output voltage | VOUT | 50 | V |
| Output current | IOUT | 300 | mA/ch |
| Input voltage | VIN | 0.5 to 30 | V |
| Power dissipation (PG) | PD | 1.47 | W |
| Power dissipation (FG) | PD | 0.625 | W |
| Power dissipation (FNG) | PD | 0.78 | W |
| Power dissipation (FWG) | PD | 1.25 | W |
| Operating temperature | Topr | 40 to 85 | C |
| Storage temperature | Tstg | 55 to 150 | C |
Electrical Characteristics (Ta = 25 C unless otherwise noted)
| Characteristics | Symbol | Test Circuit | Condition | Min | Typ. | Max | Unit |
| Output leakage current | Ileak | 1 | VOUT = 50V, Ta = 85 C, VIN = 0 V | 1.0 | A | ||
| Output voltage (Output ON-resistance) TBD62502A series | VDS (RON) | 2 | IOUT = 200 mA, VIN =14 V | 0.4 (2.0) | 0.65 (3.25) | V () | |
| Output voltage (Output ON-resistance) TBD62502A series | VDS (RON) | 2 | IOUT = 100 mA, VIN =14 V | 0.2 (2.0) | 0.325 (3.25) | V () | |
| Output voltage (Output ON-resistance) TBD62503A series | VDS (RON) | 2 | IOUT = 200 mA, VIN =5.0 V | 0.4 (2.0) | 0.65 (3.25) | V () | |
| Output voltage (Output ON-resistance) TBD62503A series | VDS (RON) | 2 | IOUT = 100 mA, VIN =5.0 V | 0.2 (2.0) | 0.325 (3.25) | V () | |
| Input current (Output on) TBD62502A series | IIN (ON) | 3 | VIN = 14 V | 1.0 | mA | ||
| Input current (Output on) TBD62503A series | IIN (ON) | 3 | VIN = 2.5 V | 0.1 | |||
| Input current (Output off) | IIN (OFF) | 4 | VIN = 0 V, Ta = 85C | 1.0 | A | ||
| Input voltage (Output on) TBD62502A series | VIN (ON) | 5 | IOUT = 100 mA, VOUT = 2 V | 14 | V | ||
| Input voltage (Output on) TBD62503A series | VIN (ON) | 5 | IOUT = 100 mA, VOUT = 2 V | 2.5 | |||
| Turnon delay | tON | 6 | VOUT = 50 V, RL = 200 , CL = 15 pF | 0.4 | s | ||
| Turnoff delay | tOFF | 6 | VOUT = 50 V, RL = 200 , CL = 15 pF | 0.8 | s |
Precautions: This IC does not include built-in protection circuits for excess current or overvoltage. Utmost care is necessary in the design of the output line, COMMON, and GND line to prevent destruction due to short-circuits or improper grounding. Design for adequate heat radiation to avoid exceeding the specified junction temperature (TJ).
2410121457_TOSHIBA-TBD62503AFNG-Z-EL_C5381640.pdf
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