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quality High frequency switching Slkor SL8N100F N channel MOSFET with low gate charge and improved dvdt capability factory
quality High frequency switching Slkor SL8N100F N channel MOSFET with low gate charge and improved dvdt capability factory

High frequency switching Slkor SL8N100F N channel MOSFET with low gate charge and improved dvdt capability

Key Attributes
Model Number: SL8N100F
Product Custom Attributes
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
8A
RDS(on):
2.3Ω@10V,4A
Gate Threshold Voltage (Vgs(th)):
5V
Reverse Transfer Capacitance (Crss@Vds):
12pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
687pF@25V
Pd - Power Dissipation:
31.7W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
SL8N100F
Package:
TO-220F
Product Description

Product Overview

The SL8N100 Series is a high-performance N-channel MOSFET designed for high-frequency switching applications. It features low gate charge, low Crss (typ 9pF), and fast switching speeds, making it ideal for power supplies, electronic ballasts, and UPS systems. The device offers improved dv/dt capability and is 100% avalanche tested, ensuring reliability and robustness in demanding applications. This RoHS-compliant product is available in various package types.

Product Attributes

  • Brand: SLKormicro
  • Certifications: RoHS

Technical Specifications

ParameterSymbolTest ConditionsMinTypeMaxUnitTO-220/TO-247TO-263/TO-262TO-220F
Drain-Source VoltageVDSS-1000--V---
Drain Current-continuousIDT=25--8A---
Drain Current-continuousIDT=100--5A---
Drain Current-pulseIDMnote 1--32*A---
Gate-Source VoltageVGS---30V---
Single pulse avalanche energyEASnote 2--650mJ---
Avalanche CurrentIARnote 1--8A---
Repetitive Avalanche EnergyEARnote 1--393mJ---
Power DissipationPDTC=25--167W✔--
Power DissipationPDDerate above 25--1.43W/✔--
Power DissipationPDTC=25--83W-✔-
Power DissipationPDDerate above 25--0.34W/-✔-
Power DissipationPDTC=25--31.7W--✔
Power DissipationPDDerate above 25--0.25W/--✔
Operating and Storage Temperature RangeTJ,TSTG--55-+150---
Peak Diode Recovery dv/dtdv/dtnote 3--4.5V/ns---
Maximum Lead Temperature for Soldering PurposesTL---300---
Breakdown Voltage Temperature CoefficientBVDSS/ TJID=250A,referenced to 25-1.05-V/---
Zero Gate Voltage Drain CurrentIDSSVDS=1000V,VGS=0V TC=25--1A---
Zero Gate Voltage Drain CurrentIDSSVDS=800V,TC =125--10A---
Gate body leakage currentIGSSVDS=0V,VGS=30V--100nA---
Gate Threshold VoltageVGS(th)VDS=VGS,ID=250A3.0-5.0V---
Static Drain-Source On-ResistanceRDS(ON)VGS=10V,ID=4A-1.82.3---
Forward TransconductancegFSVDS=40V,ID=4A (note 4)-5.6-S---
Input capacitanceCissVDS=25V, VGS=0V, f=1.0MHZ-687-pF---
Output capacitanceCoss--67-pF---
Reverse transfer capacitanceCrss--12-pF---
Turn-On delay timetd(on)VDD=500V,ID=8A, RGEN=25 (note 4,5)-13-ns---
Turn-On rise timetr--22-ns---
Turn-Off delay timetd(Off)--63-ns---
Turn-Off rise timetf--19-ns---
Total Gate ChargeQgVDS=750V,ID=4A, VGS=10V (note 4,5)-14-nC---
Gate-Source chargeQgs--4-nC---
Gate-Drain chargeQg d--5-nC---
Diode Forward VoltageVSDVGS=0V,IS=8A (note 3)--1.4V---
Maximum Pulsed Drain-Source Diode Forward CurrentISM---24A---
Maximum Continuous Drain Source Diode Forward CurrentIS---8A---
Reverse recovery timetrrVGS=0V, IS=4A dIF/dt=100A/s Tc=25 (note 4)-159-ns---
Reverse recovery chargeQrr--693-nC---
Reverse recovery timetrrVGS=0V, IS=3A dIF/dt=100A/s Tc=100 (note 4)-153-ns---
Reverse recovery chargeQrr--685-nC---
Thermal Resistance, junction to CaseRth(j-C)--0.78-/W✔33.94
Thermal Resistance, Junction to AmbientRth(j-A)--62.5-/W-6580

2409302203_Slkor-SL8N100F_C19188390.pdf

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