PNP Silicon Transistor TOSHIBA 2SA1201-Y TE12L ZC for Voltage Amplifier Power Amplifier Applications

Key Attributes
Model Number: 2SA1201-Y(TE12L,ZC
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
80@100mA,5V
Transition Frequency(fT):
120MHz
Type:
PNP
Vce Saturation(VCE(sat)):
1V
Pd - Power Dissipation:
500mW
Current - Collector(Ic):
800mA
Collector - Emitter Voltage VCEO:
120V
Mfr. Part #:
2SA1201-Y(TE12L,ZC
Package:
TO-243AA
Product Description

Product Overview

The TOSHIBA 2SA1201 is a silicon PNP epitaxial transistor designed for voltage amplifier and power amplifier applications. It features high voltage capability (VCEO = -120 V), a high transition frequency (fT = 120 MHz typ.), and comes in a small flat package. It is complementary to the 2SC2881.

Product Attributes

  • Brand: TOSHIBA
  • Type: Silicon PNP Epitaxial Transistor (PCT process)
  • Package: PW-MINI (JEDEC: SC-62, JEITA: 2-5K1A)
  • Weight: 0.05 g (typ.)
  • Start of Commercial Production: 1980-07
  • Certifications: RoHS Compatible (indicated by a line beside Lot No.)

Technical Specifications

Characteristics Symbol Test Condition Min Typ. Max Unit
Absolute Maximum Ratings VCBO -120 V
VCEO -120 V
VEBO -5 V
Absolute Maximum Ratings IC -800 mA
IB -160 mA
PC (Note 1) 1000 mW
Absolute Maximum Ratings Tj 150 C
Tstg -55 150 C
Electrical Characteristics (Ta = 25C) ICBO VCB = -120 V, IE = 0 -0.1 A
IEBO VEB = -5 V, IC = 0 -0.1 A
V(BR)CEO IC = -10 mA, IB = 0 -120 V
V(BR)EBO IE = -1 mA, IC = 0 -5 V
hFE (Note 3) VCE = -5 V, IC = -100 mA 80 240
VCE (sat) IC = -500 mA, IB = -50 mA -1.0 V
VBE VCE = -5 V, IC = -500 mA -1.0 V
fT VCE = -5 V, IC = -100 mA 120 MHz
Electrical Characteristics (Ta = 25C) Cob VCB = -10 V, IE = 0, f = 1 MHz 30 pF

2410121720_TOSHIBA-2SA1201-Y-TE12L-ZC_C6342364.pdf

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