NPN transistor Slkor 2SC1623 designed for high DC current gain and voltage capability in electronics
Key Attributes
Model Number:
2SC1623
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
600@1mA,6V
Transition Frequency(fT):
150MHz
Number:
1 NPN
Vce Saturation(VCE(sat)):
300mV@100mA,10mA
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
2SC1623
Package:
SOT-23
Product Description
Product Overview
This NPN transistor offers high DC current gain (hFE=200 Typ) and high voltage capability (VCEO=50V). It is suitable for applications requiring stable current amplification and voltage handling.
Product Attributes
- Type: NPN Transistor
- Marking: L4, L5, L6, L7
- Package: SOT-23
- Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR
- Brand: SLKOR (Implied by website URL)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| FEATURES | ||||||
| High DC current gain | hFE | VCE=6V, IC=1mA | 200 | |||
| High voltage | VCEO | 50 | V | |||
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| Collector-Base Voltage | VCBO | 60 | V | |||
| Collector-Emitter Voltage | VCEO | 50 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current -Continuous | IC | 100 | mA | |||
| Collector Power Dissipation | PC | 200 | mW | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A, IE=0 | 60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 50 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=60V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 0.1 | A | ||
| DC current gain | hFE | VCE=6V, IC=1mA | 90 | 200 | 600 | |
| Collector-emitter saturation voltage | VCE(sat) | IC=100mA, IB=10mA | 0.3 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=100mA, IB=10mA | 1 | V | ||
| Transition frequency | fT | VCE=6V, IC=10mA, f=30MHz | 150 | MHz | ||
| CLASSIFICATION OF hFE | ||||||
| Rank | ||||||
| L4 | 90-180 | |||||
| L5 | 135-270 | |||||
| L6 | 200-400 | |||||
| L7 | 300-600 | |||||
1912111437_Slkor-2SC1623_C337071.pdf
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