Surface Mount P Channel MOSFET Slkor SL3415 Designed for High Power and Current Handling Applications
Key Attributes
Model Number:
SL3415
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
RDS(on):
33mΩ@4.5V;45mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
160pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.45nF@10V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
17.2nC@4.5V
Mfr. Part #:
SL3415
Package:
SOT-23
Product Description
Product Overview
The SL3415 is a P-Channel Power MOSFET designed for high power and current handling capabilities. It features low on-state resistance, making it suitable for applications such as PWM and load switching. This lead-free product is available in a surface mount SOT-23 package.
Product Attributes
- Brand: SLKORMicro
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -20 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=10V,VDS=0V | - | - | 10 | A |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -0.3 | -0.65 | -1 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-4A | - | 50 | - | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-2.5V, ID=-4A | - | 45 | 60 | m |
| Forward Transconductance | gFS | VDS=-5V,ID=-4A | 8 | - | - | S |
| Input Capacitance | Clss | - | 1450 | - | PF | |
| Output Capacitance | Coss | - | 205 | - | PF | |
| Reverse Transfer Capacitance | Crss | VDS=-10V,VGS=0V, F=1.0MHz | - | 160 | - | PF |
| Turn-on Delay Time | td(on) | - | 9.5 | - | nS | |
| Turn-on Rise Time | tr | - | - | - | nS | |
| Turn-Off Delay Time | td(off) | - | 94 | - | nS | |
| Turn-Off Fall Time | tf | VDD=-10V,RL=2. 5, VGS=-4.5V,RGEN=3 | - | 35 | - | nS |
| Total Gate Charge | Qg | - | - | - | nC | |
| Gate-Source Charge | Qgs | - | 1.3 | - | nC | |
| Gate-Drain Charge | Qg | VDS=-10V,ID=-4A, VGS=-4.5V | - | 4.5 | - | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=-1A | - | - | -1 | V |
| Diode Forward Current | IS | - | - | -4 | A | |
| Drain Current-Continuous | ID | - | - | -4 | A | |
| Drain Current-Pulsed | IDM | - | - | -30 | A | |
| Maximum Power Dissipation | PD | - | - | 1.5 | W | |
| Drain-Source Voltage | VDS | -20 | - | - | V | |
| Gate-Source Voltage | VGS | - | - | 8 | V | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | - | 150 | ||
| Thermal Resistance,Junction-to-Ambient | RJA | - | /W | - |
2005211106_Slkor-SL3415_C556177.pdf
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