High voltage n channel mosfet Slkor SL10N65F ideal for led power supplies and switching devices
Key Attributes
Model Number:
SL10N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
940mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
22pF
Number:
1 N-channel
Output Capacitance(Coss):
122pF
Input Capacitance(Ciss):
1.12nF
Pd - Power Dissipation:
41.8W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
SL10N65F
Package:
TO-220F
Product Description
Product Overview
The SL10N65F is an N-channel MOSFET designed for high-efficiency applications. It features low gate charge, fast switching speeds, and 100% avalanche testing, making it suitable for switch mode power supplies, electronic ballasts, and LED power supplies. Its improved dv/dt capability and RoHS compliance ensure reliable and environmentally conscious performance.
Product Attributes
- Brand: SLKOR
- Certifications: RoHS, Halogen Free (No)
- Material: N-Channel MOSFET
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| MAIN CHARACTERISTICS | ||||||
| ID | ID | 10 | A | |||
| VDSS | VDSS | 650 | V | |||
| RDS(ON) | RDS(ON) | VGS=10V | 0.94 | |||
| QG | QG | 35 | nC | |||
| ABSOLUTE RATINGS | ||||||
| Drain-Source Breakdown Voltage | VDSS | 650 | V | |||
| Continuous Drain Current | ID | TC=25 | 10* | A | ||
| Continuous Drain Current | ID | TC=100 | 6.3* | A | ||
| Drain Current pulsed | IDM | (note 1) | 40* | A | ||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Single Pulsed Avalanche Energy | EAS | (note 2) | 427 | mJ | ||
| Repetitive Avalanche Current | EAR | (note 1) | 43 | mJ | ||
| Peak Diode Recovery dv/dt | dv/dt | (note 3) | 5 | V/ns | ||
| Total Power Dissipation | PD | TC=25 | 41.8 | W | ||
| Derate above 25 | 0.33 | W/ | ||||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Maximum Temperature for Soldering Leads | TL | 300 | ||||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID=250A, VGS=0V | 650 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/TJ | ID=250A, referenced to 25 | - | 0.51 | - | V/ |
| Drain-Source leakage Current | IDSS | VDS=650V,VGS=0V | - | - | 1 | A |
| Drain-Source leakage Current | IDSS | VDS=520V,TC=125 | - | - | 50 | A |
| Gate-Source leakage current (Forward) | IGSS | VDS=0V,VGS=30V | - | - | 100 | nA |
| Gate-Source leakage current (Reverse) | IGSS | VDS=0V,VGS=-30V | - | -100 | - | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGSID=250A | 2.5 | - | 4.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=5A | - | 0.82 | 0.94 | |
| Forward Transconductance | gFS | VDS=30V,ID=5A (note 4) | 7 | - | - | S |
| Input capacitance | CISS | VDS=25V,VGS=0V, f=1MHBZB | - | 1120 | - | pF |
| Output capacitance | COSS | - | 122 | - | pF | |
| Reverse transfer capacitance | CRSS | - | 22 | - | ||
| Turn on delay time | td(ON) | VDD=325V,ID=10A, RG=25 note 45 | - | 17 | - | ns |
| Rise time | tr | - | 43 | - | ns | |
| Turn off delay time | td(off) | - | 88 | - | ns | |
| Fall time | tf | - | 46 | - | ns | |
| Total Gate Charge | QG | VDS=520V,ID=10A, VGS=10V note 45 | - | 35 | - | nC |
| Gate-Source charge | QGS | - | 6 | - | ||
| Gate-Drain charge | QGD | - | 17 | - | ||
| Continuous Forward Current | IS | - | - | 10 | A | |
| Pulsed Forward Current | ISM | - | - | 40 | A | |
| Forward Voltage | VSD | VGS=0V,IS=10A | - | - | 1.5 | V |
| Reverse recovery time | trr | VGS=0V,IS=10A, dIF/dt=100A/s (note 4) | - | 511 | - | ns |
| Reverse recovery charge | Qrr | - | 12 | - | C | |
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance,Junction to Case | Rth(j-c) | 2.99 | /W | |||
| Thermal Resistance,Junction to Ambient | Rth(j-a) | 47.21 | /W | |||
1809251636_Slkor-SL10N65F_C251158.pdf
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