High Current Slkor SL90N03R Power MOSFET with Fast Switching and Superior Avalanche Energy Capability
Key Attributes
Model Number:
SL90N03R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
240pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.95nF@15V
Pd - Power Dissipation:
90W
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
SL90N03R
Package:
PDFN5x6-8
Product Description
Product Overview
This Power MOSFET utilizes advanced TRENCH technology to minimize conduction loss, offer superior switching performance, and provide high energy pulse withstand capability in avalanche and commutation modes. It is designed for applications requiring low on-resistance, fast switching, and robust dv/dt capability.
Product Attributes
- Brand: SLKORMicro (inferred from URL)
- Certifications: 100% UIS TESTED!, 100% Vds TESTED!
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Drain-source Voltage | VDS | 30 | V | VGS=0V, ID=250A |
| Gate-source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 90 | A | TC=25 |
| 58 | TC=100 | |||
| Pulsed Drain Current | IDM | 360 | A | TC=25, Tp Limited By Tjmax (note1) |
| Maximum Power Dissipation | PD | 90 | W | TC=25 |
| Avalanche energy, single Pulse | EAS | 90 | mJ | L=0.5mH (note2) |
| Operating Junction And Storage Temperature | Tj,Tstg | -55 To 150 | ||
| Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | TL | 300 | ||
| Junction-to-Case Thermal Resistance | RJC | 1.67 | /W | Max |
| Drain-source breakdown voltage | BVDSS | 30 | V | VGS=0V, ID=250A |
| Zero gate voltage drain current | IDSS | 1 | A | VDS=30V, VGS=0V |
| 10 | A | VDS=24V, TC =125 | ||
| Gate-source leakage current | IGSS | ±100 | nA | VGS=±20V, VDS=0V |
| Gate threshold voltage | VGS(th) | 1.0-2.5 | V | VDS=VGS, ID=250A (Min. Typ. Max.) |
| Drain-source on-state resistance | RDS(on) | 4.2 | m | VGS=10V, ID=30A (Typ.) |
| 5.6 | VGS=4.5V, ID=30A (Typ.) | |||
| Input Capacitance | Ciss | 1950 | PF | VGS=0V, VDS=15V, f=1.0MHz |
| Output Capacitance | Coss | 320 | PF | VGS=0V, VDS=15V, f=1.0MHz |
| Reverse Transfer Capacitance | Crss | 240 | PF | VGS=0V, VDS=15V, f=1.0MHz |
| Turn-on delay time | td(on) | 13 | nS | VDS=15V, VGS=10V, RG=25, ID=30A (Typ.) |
| Turn-on Rise time | tr | 36 | nS | VDS=15V, VGS=10V, RG=25, ID=30A (Typ.) |
| Turn-off delay time | td(off) | 43 | nS | VDS=15V, VGS=10V, RG=25, ID=30A (Typ.) |
| Turn-off Fall time | tf | 16 | nS | VDS=15V, VGS=10V, RG=25, ID=30A (Typ.) |
| Gate Total Charge | QG | 42 | nC | VGS=10V, VDS=15V, ID=30A (Typ.) |
| Gate-Source Charge | QgS | 4 | nC | VGS=10V, VDS=15V, ID=30A (Typ.) |
| Gate-Drain Charge | Qgd | 14 | nC | VGS=10V, VDS=15V, ID=30A (Typ.) |
| Body Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, ISD=30A, TJ =25 (Typ.) |
| Body Diode Forward Current | Is | 90 | A | |
| Body Diode Reverse Recovery Time | Trr | 16 | ns | TJ=25, ISD=20A, VGS=0V, di/dt =100A/s (Typ.) |
| Body Diode Reverse Recovery Charge | Qrr | 5 | nC | TJ=25, ISD=20A, VGS=0V, di/dt =100A/s (Typ.) |
2305261759_Slkor-SL90N03R_C6800612.pdf
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