power switching Slkor SL40P05Y P channel mosfet with ultra low RDSON and avalanche current capability
Key Attributes
Model Number:
SL40P05Y
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
4.4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@10V,4.4A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
70pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
600pF@20V
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
SL40P05Y
Package:
SOT-23
Product Description
Product Overview
The SL40P05Y is a -40V P-Channel MOSFET featuring a high-density cell design for ultra low RDS(ON). It offers fully characterized avalanche voltage and current, with an excellent package for good heat dissipation. This MOSFET is suitable for power switching applications, hard switched and high frequency circuits, and DC-DC converters.
Product Attributes
- Brand: SLKormicro
- Model: SL40P05Y
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -40 | -- | -- | V |
| Gate-Source Breakdown Voltage | BVDGS | VDS=0V, IG=-100A | -- | -- | 20 | V |
| Continuous Drain Current | ID | TC=25C, GS=10V | -- | -- | -4.4 | A |
| Continuous Drain Current | ID | TC=25C, GS=10V (Mounted on Large Heat Sink) | -- | -- | -15 | A |
| Pulse Drain Current | IDM | TC=25C | -- | -- | -4 | A |
| Diode Continuous Forward Current | IS | TC=25C | -- | -- | -1.2 | A |
| Maximum Power Dissipation | PD | TC=25C | -- | -- | 1.2 | W |
| Maximum Power Dissipation | PD | TA=25C (Mounted on Large Heat Sink) | -- | -- | 1.04 | W |
| Storage Temperature Range | TSTG | -- | -55 | -- | 150 | C |
| Maximum Junction Temperature | TJ | -- | -- | -- | 150 | C |
| Thermal Resistance Junction-to-Ambient | JA | Mounted on Large Heat Sink | -- | -- | 104 | C/W |
| Electrical Characteristics (TJ=25 unless otherwise noted) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -1.0 | -1.2 | -1.8 | V |
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | -- | -- | 100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS=-40V, VGS=0V | -- | -- | -1 | uA |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-1A | -- | 90 | 150 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-2A | -- | 77 | 115 | m |
| Dynamic Electrical Characteristics (TJ=25 unless otherwise noted) | ||||||
| Input Capacitance | Ciss | VDS=-20V, VGS=-10V, f=1MHz | -- | 70 | -- | pF |
| Output Capacitance | Coss | VDS=-20V, VGS=-10V, f=1MHz | -- | 90 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-20V, VGS=-10V, f=1MHz | -- | 14 | -- | pF |
| Total Gate Charge | Qg | VDD=-20V, ID=-3A, VGS=-10V | -- | 3.8 | -- | nC |
| Gate Drain Charge | Qgd | VDD=-20V, ID=-3A, VGS=-10V | -- | 3 | -- | nC |
| Gate Source Charge | Qgs | VDD=-20V, ID=-3A, VGS=-10V | -- | 11 | -- | nC |
| Turn-on Delay Time | td(on) | RG=3, VDD=-20V, ID=-3A, VGS=-10V | -- | 8 | -- | nS |
| Turn-on Rise Time | tr | RG=3, VDD=-20V, ID=-3A, VGS=-10V | -- | 9 | -- | nS |
| Turn-off Delay Time | td(off) | RG=3, VDD=-20V, ID=-3A, VGS=-10V | -- | 28 | -- | nS |
| Turn-off Fall Time | tf | RG=3, VDD=-20V, ID=-3A, VGS=-10V | -- | 11 | -- | nS |
| Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | Tj=25, Is=-4A | -- | -1.0 | -2.5 | V |
2409302300_Slkor-SL40P05Y_C5355492.pdf
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