Power Management with Slkor SL4813A P Channel Enhancement Mode Field Effect Transistor and Trench MOSFET

Key Attributes
Model Number: SL4813A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
164pF@15V
Number:
2 P-Channel
Input Capacitance(Ciss):
1.488nF@15V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
28.44nC@10V
Mfr. Part #:
SL4813A
Package:
SOP-8
Product Description

Product Overview

The SL4813A is a P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology for high density cell design and low RDS(ON). It offers high-speed switching capabilities, making it suitable for battery protection, load switching, and power management applications.

Product Attributes

  • Brand: SLKormicro
  • Model: SL4813A
  • Technology: Trench Power LV MOSFET

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
Drain-source VoltageVDS-30V
Gate-source VoltageVGS±20V
Drain CurrentID-7.1A
Pulsed Drain CurrentIDM-20A
Total Power DissipationPDTA=252.5W
Total Power DissipationPDTA=701.6W
Thermal Resistance Junction-to-AmbientRJA50/ W
Junction and Storage Temperature RangeTJ ,TSTG-55+150
Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=-250A-30V
Zero Gate Voltage Drain CurrentIDSSVDS=-30V,VGS=0V-1μA
Gate-Body Leakage CurrentIGSSVGS=±20V, VDS=0V±100nA
Gate Threshold VoltageVGS(th)VDS= VGS, ID=-250μA-1.0-1.5-2.5V
Static Drain-Source On-ResistanceRDS(ON)VGS=-10V, ID=-7A2025
Static Drain-Source On-ResistanceRDS(ON)VGS=-4.5V, ID=-5A3040
Diode Forward VoltageVSDIS=-7A,VGS=0V-1.2V
Input CapacitanceCissVDS=-15V,VGS=0V,f=1MHZ1488pF
Output CapacitanceCossVDS=-15V,VGS=0V,f=1MHZ178pF
Reverse Transfer CapacitanceCrssVDS=-15V,VGS=0V,f=1MHZ164pF
Total Gate ChargeQgVGS=-10V,VDS=-15V,ID=-7.1A28.44nC
Gate-Source ChargeQgsVGS=-10V,VDS=-15V,ID=-7.1A5.25nC
Gate-Drain ChargeQgVGS=-10V,VDS=-15V,ID=-7.1A5.17nC
Reverse Recovery ChrageQrrIF=-5A, di/dt=100A/us5.3
Reverse Recovery TimetrrIF=-5A, di/dt=100A/us14ns
Turn-on Delay TimetD(on)VGS=-10V, VDS=-15V, ID=-7.1A RGEN=2.5Ω10ns
Turn-on Rise TimetrVGS=-10V, VDS=-15V, ID=-7.1A RGEN=2.5Ω44ns
Turn-off Delay TimetD(off)VGS=-10V, VDS=-15V, ID=-7.1A RGEN=2.5Ω54ns
Turn-off fall TimetfVGS=-10V, VDS=-15V, ID=-7.1A RGEN=2.5Ω58ns

2201210930_Slkor-SL4813A_C2965538.pdf

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