1200V SiC MOSFET Slkor SL87N120A Featuring Fast Recovery Diode and Recommended 18V Gate Drive Voltage
Key Attributes
Model Number:
SL87N120A
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
118A
Operating Temperature -:
-55℃~+175℃
RDS(on):
22mΩ
Gate Threshold Voltage (Vgs(th)):
4.5V
Reverse Transfer Capacitance (Crss@Vds):
16.3pF
Pd - Power Dissipation:
469W
Output Capacitance(Coss):
211pF
Input Capacitance(Ciss):
4.41nF
Gate Charge(Qg):
214nC
Mfr. Part #:
SL87N120A
Package:
TO-247-4
Product Description
Product Overview
The SL87N120A is a 1200V, 17m SiC MOSFET designed for high-performance applications. It features a recommended 18V gate drive, high voltage capability, low on-resistance, high switching speed with low parasitic capacitance, and high operating junction temperature. The device also includes a fast-recovery body diode and Kelvin connection for efficient drive.
Product Attributes
- Brand: SLKORMicro
- Model: SL87N120A
- Package: TO247-4
- Origin: Not specified
- Material: SiC (Silicon Carbide)
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter Description | Typical Value | Unit | Test Condition | Notes |
| VDS | Drain-Source Voltage | 1200 | V | VGS=0V, ID=100A | |
| VGSmax (DC) | Maximum DC Gate-Source Voltage | -5 to 20 | V | Static (DC) | |
| VGSmax (Spike) | Maximum Spike Gate-Source Voltage | -10 to 23 | V | Duty cycle <1%, Pulse width <200ns | |
| VGSon | Recommended Turn-on Gate-Source Voltage | 18 0.5 | V | ||
| VGSoff | Recommended Turn-off Gate-Source Voltage | -3.5 to -2 | V | ||
| ID | Maximum Drain Current | 118 | A | VGS=18V, TC=25C | Fig. 23 |
| ID | Maximum Drain Current | 87 | A | VGS=18V, TC=100C | |
| IDM | Maximum Pulsed Drain Current | 295 | A | Determined by device safe operating area | Fig. 26 |
| PTOT | Maximum Power Dissipation | 469 | W | TC=25C | Fig. 24 |
| Tstg | Storage Temperature Range | -55 to 175 | C | ||
| TJ | Operating Junction Temperature Range | -55 to 175 | C | ||
| TL | Soldering Temperature | 260 | C | Wave soldering at leads, 1.6mm from case, duration 10 seconds | |
| R(J-C) | Thermal Resistance Junction-to-Case | 0.271 | C/W | Fig. 25 | |
| IDSS | Drain Leakage Current at Cut-off | 5 to 100 | A | VDS=1200V, VGS=0V | |
| IGSS | Gate Leakage Current | 100 | nA | VDS=0V, VGS=-5~20V | |
| VTH | Threshold Voltage | 1.8 to 4.5 | V | VGS=VDS, ID=20mA | Fig. 8, 9 |
| VTH @ TJ=175C | Threshold Voltage | 2.1 | V | VGS=VDS, ID=20mA | |
| RON | On-Resistance | 17 to 22 | m | VGS=18V, ID=60A @TJ=25C | Fig. 4, 5, 6, 7 |
| RON @ TJ=175C | On-Resistance | 34 | m | VGS=18V, ID=60A @TJ=175C | |
| Ciss | Input Capacitance | 4410 | pF | VDS=800V, VGS=0V, f=100kHz, VAC=25mV | Fig. 16 |
| Coss | Output Capacitance | 211 | pF | ||
| Crss | Reverse Transfer Capacitance | 16.3 | pF | ||
| Eoss | Output Capacitance Stored Energy | 81 | J | Fig. 17 | |
| Qg | Total Gate Charge | 214 | nC | VDS=800V, ID=60A, VGS=-3 to 18V | Fig. 18 |
| Qgs | Gate-Source Charge | 55 | nC | ||
| Qgd | Gate-Drain Charge | 69 | nC | ||
| Rg | Gate Input Resistance | 1.9 | f=1MHz | ||
| EON | Turn-on Energy | 1280 | J | VDS=800V, ID=60A, VGS=-3.5 to 18V, RG(ext)=2.0, L=200H TJ=25C | Fig. 19, 20 |
| EOFF | Turn-off Energy | 333.5 | J | VDS=800V, ID=60A, VGS=-3.5 to 18V, RG(ext)=2.0, L=200H TJ=25C | |
| td(on) | Turn-on Delay Time | 17.1 | ns | ||
| tr | Rise Time | 33.2 | ns | ||
| td(off) | Turn-off Delay Time | 35.5 | ns | ||
| tf | Fall Time | 15.1 | ns | ||
| EON @ TJ=175C | Turn-on Energy | 1544 | J | VDS=800V, ID=60A, VGS=-3.5 to 18V, RG(ext)=2.0, L=200H TJ=175C | Fig. 22 |
| EOFF @ TJ=175C | Turn-off Energy | 357.4 | J | VDS=800V, ID=60A, VGS=-3.5 to 18V, RG(ext)=2.0, L=200H TJ=175C | |
| VSD | Forward Voltage | 3.6 | V | ISD=30A, VGS=0V | Fig. 10, 11, 12 |
| VSD @ TJ=175C | Forward Voltage | 3.4 | V | ISD=30A, VGS=0V, TJ=175C | |
| trr | Reverse Recovery Time | 54 | ns | VGS=-3.5V/+18V, ISD=60A, VR=800V, RG(ext)=10 L=200H di/dt=3000A/s | |
| Qrr | Reverse Recovery Charge | 383.8 | nC | ||
| IRRM | Peak Reverse Recovery Current | 25.3 | A |
Features
- Recommended 18V gate voltage drive
- High voltage, low on-resistance
- High speed, low parasitic capacitance
- High operating junction temperature
- Fast recovery body diode
- Kelvin connection for drive
Applications
- EV Main Drive Inverter
- PV Inverter
- Motor Drive
- High Voltage DC/DC Converter
- Switching Power Supply
2409280230_Slkor-SL87N120A_C21714300.pdf
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