PNP silicon transistor UTC 2SB772L-P-TN3-R designed for in DC DC converters and audio power amplifier systems
Key Attributes
Model Number:
2SB772L-P-TN3-R
Product Custom Attributes
Current - Collector Cutoff:
1uA
Emitter-Base Voltage(Vebo):
7V
DC Current Gain:
400@1A,2V
Transition Frequency(fT):
80MHz
Vce Saturation(VCE(sat)):
500mV@2A,0.2A
Pd - Power Dissipation:
1W
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
30V
Mfr. Part #:
2SB772L-P-TN3-R
Package:
TO-252
Product Description
Product Overview
The UTC 2SB772 is a medium power, low voltage PNP silicon transistor designed for various electronic applications. It is suitable for use in audio power amplifiers, DC-DC converters, and voltage regulators. Key features include high current output up to 3A and low saturation voltage, making it a complementary part to the 2SD882 transistor.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: Silicon
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Ordering Number | Package | Pin Assignment | Lead Free | Halogen Free |
| 2SB772L-x-T60-K | TO-126 | E C B | Bulk | |
| 2SB772G-x-T60-K | TO-126 | E C B | Bulk | |
| 2SB772L-x-T6C-K | TO-126C | E C B | Bulk | |
| 2SB772G-x-T6C-K | TO-126C | E C B | Bulk | |
| 2SB772L-x-TM3-T | TO-251 | B C E | Tube | |
| 2SB772G-x-TM3-T | TO-251 | B C E | Tube | |
| 2SB772L-x-TN3-R | TO-252 | B C E | Tape Reel | |
| 2SB772G-x-TN3-R | TO-252 | B C E | Tape Reel | |
| 2SB772L-x-T9N-B | TO-92NL | E C B | Tape Box | |
| 2SB772G-x-T9N-B | TO-92NL | E C B | Tape Box | |
| 2SB772L-x-T9N-K | TO-92NL | E C B | Bulk | |
| 2SB772G-x-T9N-K | TO-92NL | E C B | Bulk |
| Parameter | Symbol | Rating Unit | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | -40 | V | ||||
| Collector-Emitter Voltage | VCEO | -30 | V | ||||
| Emitter-Base Voltage | VEBO | -7 | V | ||||
| Collector Current DC | IC | -3 | A | ||||
| Collector Current Pulse | ICP | -7 | A | ||||
| Base Current | IB | -0.6 | A | ||||
| Collector Dissipation TO-92NL | PC | 0.5 | W | ||||
| Collector Dissipation TO-126/TO-126C | PC | 1 | W | ||||
| Collector Dissipation TO-251/TO-252 | PC | 1 | W | ||||
| Junction Temperature | TJ | +150 | C | ||||
| Storage Temperature | TSTG | -55 ~ +150 | C | ||||
| Junction to Case TO-126/TO-126C | JC | 12.5 | C/W | ||||
| Junction to Case TO-251/TO-252 | JC | 12.5 | C/W | ||||
| Junction to Case TO-92NL | JC | 25 | C/W | ||||
| Collector-Base Breakdown Voltage | BVCBO | -40 | IC=-100A, IE=0 | V | |||
| Collector-Emitter Breakdown Voltage | BVCEO | -30 | IC=-1mA, IB=0 | V | |||
| Emitter-Base Breakdown Voltage | BVEBO | -7 | IE=-100A, IC=0 | V | |||
| Collector Cut-Off Current | ICBO | -1000 | VCB=-30V ,IE=0 | nA | |||
| Collector Cut-Off Current | ICEO | -1000 | VCE=-30V ,IB=0 | nA | |||
| Emitter Cut-Off Current | IEBO | -1000 | VEB=-5V, IC=0 | nA | |||
| DC Current Gain | hFE1 | 30 | VCE=-2V, IC=-20mA | 200 | |||
| DC Current Gain | hFE2 | 100 | VCE=-2V, IC=-1A | 150 | 400 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | -0.3 | IC=-2A, IB=-0.2A | -0.5 | V | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | -1.0 | IC=-2A, IB=-0.2A | -2.0 | V | ||
| Current Gain Bandwidth Product | fT | 80 | VCE=-5V, IC=-0.1A | MHz | |||
| Output Capacitance | COB | 45 | VCB=-10V, IE=0,f=1MHz | pF |
2212091108_UTC-2SB772L-P-TN3-R_C5310417.pdf
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