NPN transistor UTC 2SD1624G-S-AB3-R featuring large current capacity and wide area of safe operation
Key Attributes
Model Number:
2SD1624G-S-AB3-R
Product Custom Attributes
Current - Collector Cutoff:
1uA
Emitter-Base Voltage(Vebo):
6V
DC Current Gain:
560
Transition Frequency(fT):
150MHz
Vce Saturation(VCE(sat)):
500mV@2A,100mA
Type:
NPN
Pd - Power Dissipation:
500mW
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
2SD1624G-S-AB3-R
Package:
SOT-89
Product Description
Product Overview
The UTC 2SD1624 is an NPN silicon transistor designed for high current switching applications. It is suitable for voltage regulators, relay drivers, lamp drivers, and general electrical equipment. Key features include the adoption of FBET and MBIT processes, low collector-to-emitter saturation voltage, fast switching speed, large current capacity, and a wide Area of Safe Operation (ASO).
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Product Type: NPN Silicon Transistor
- Model: 2SD1624
- Manufacturing Process: FBET, MBIT
- Package: SOT-89
- Pin Assignment: B (Base), C (Collector), E (Emitter)
- Ordering Information: 2SD1624G-x-AB3-R (Tape Reel)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Collector-Base Breakdown Voltage | BVCBO | IC=10A, IE=0 | 60 | V | ||
| Collector-Emitter Breakdown Voltage | BVCEO | IC=1mA, RBE= | 50 | V | ||
| Emitter-Base Breakdown Voltage | BVEBO | IE=10A, IC=0 | 6 | V | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC=2A, IB=100mA | 0.19 | 0.5 | V | |
| Base-Emitter Saturation Voltage | VBE(SAT) | IC=2A, IB=100mA | 0.94 | 1.2 | V | |
| Collector Cut-Off Current | ICBO | VCB=40V, IE=0 | 1 | A | ||
| Emitter Cut-Off Current | IEBO | VEB=4V, IC=0 | 1 | A | ||
| DC Current Gain | hFE | VCE=2V, Ic=100mA | 100 | 560 | ||
| Gain-Bandwidth Product | fT | VCE=10V, IC=50mA | 150 | MHz | ||
| Output Capacitance | COB | VCE=10V, f=1MHz | 25 | pF | ||
| Turn-ON Time | tON | See test circuit | 70 | ns | ||
| Storage Time | tSTG | See test circuit | 650 | ns | ||
| Fall Time | tF | See test circuit | 35 | ns | ||
| Collector Power Dissipation | PC | Tc=25 | 500 | mW | ||
| Collector Current (DC) | IC | 3 | A | |||
| Collector Current (PULSE) | ICP | 6 | A | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | ~ | +150 |
2304140030_UTC-2SD1624G-S-AB3-R_C87298.pdf
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