Silicon NPN Transistor UTC 2SC3356G-B-AE2-R Suitable for DC DC Converters and Inductive Load Drivers
Key Attributes
Model Number:
2SC3356G-B-AE2-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
3V
Current - Collector Cutoff:
1uA
DC Current Gain:
160@20mA,10V
Transition Frequency(fT):
7GHz
Vce Saturation(VCE(sat)):
-
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
12V
Operating Temperature:
-
Mfr. Part #:
2SC3356G-B-AE2-R
Package:
SOT-23-3
Product Description
Product Overview
The UNISONIC TECHNOLOGIES CO., LTD 2SC3356 is an NPN Silicon Transistor designed for high-frequency, low-noise amplifier applications. It is suitable for various electronic circuits including DC/DC converters, supply line switching, battery chargers, LCD backlighting, peripheral drivers, low voltage applications (lamps, LEDs), and inductive load drivers (relays, buzzers, motors). Key features include low noise, high gain, and high power gain.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Product Name: 2SC3356
- Material: Silicon
- Certifications: Lead Free, Halogen Free (indicated by 'G' in ordering number)
Technical Specifications
| Parameter | Symbol | SOT-23-3/SOT-23 | SOT-89 | Unit | Conditions |
| Collector to Base Breakdown Voltage | BVCBO | 20 | V | IC=10A, IE=0 | |
| Collector to Emitter Breakdown Voltage | BVCEO | 12 | V | IC=1mA, RBE= | |
| Emitter to Base Breakdown Voltage | BVEBO | 3 | V | IE=10A, IC=0 | |
| Collector Current | IC | 100 | mA | ||
| Power Dissipation | PD | 200 | 500 | mW | |
| Junction Temperature | TJ | +150 | +150 | ||
| Storage Temperature | TSTG | -65 ~ +150 | -65 ~ +150 | ||
| Collector-Base Cut-Off Current | ICBO | 1.0 | 1.0 | A | VCB =10V,IE =0 |
| Emitter-Base Cut-Off Current | IEBO | 1.0 | 1.0 | A | VEB =1 V, IC=0 |
| DC Current Gain | hFE | 50 - 300 | 50 - 300 | VCE =10 V, IC =20 mA | |
| Gain Bandwidth Product | fT | 7 | 7 | GHz | VCE =10 V, IC =20 mA |
| Feed-Back Capacitance | CRE | 1.0 | 1.0 | pF | VCB =10 V, IE =0, f =1.0MHz |
| Noise Figure | NF | 2.0 | 2.0 | dB | VCE =10 V, IC =7mA, f =1.0GHz |
2202132030_UTC-2SC3356G-B-AE2-R_C2843668.pdf
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