VBsemi Elec SI4559ADY T1 E3 VB MOSFETs featuring 60 Volt Drain Source Voltage for power electronics
Key Attributes
Model Number:
SI4559ADY-T1-E3-VB
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5.3A;4.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
26mΩ@10V;55mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF;60pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
75pF;95pF
Input Capacitance(Ciss):
665pF;650pF
Pd - Power Dissipation:
3.1W;3.4W
Gate Charge(Qg):
6nC@10V;8nC@10V
Mfr. Part #:
SI4559ADY-T1-E3-VB
Package:
SO-8
Product Description
SI4559ADY-T1-E3-VB
N- and P-Channel 60-V (D-S) MOSFETs designed for applications such as CCFL inverters. These devices feature Trench Power MOSFET technology, offering high performance and reliability. They are 100% Rg and UIS tested and halogen-free.
Product Attributes
- Brand: Vishay (implied by datasheet context and common industry practice for this part number structure)
- Certifications: Halogen-free According to IEC 61249-2-21 Available
Technical Specifications
| Parameter | Symbol | N-Channel (Typ.) | P-Channel (Typ.) | Unit |
| PRODUCT SUMMARY | ||||
| VDS (V) | VDS | 60 | -60 | V |
| RDS(on) () | RDS(on) | 0.026 at VGS = 10 V 0.029 at VGS = 4.5 V | 0.055 at VGS = -10 V 0.060 at VGS = -4.5 V | |
| ID (A)a | ID | 5.3 | -4.9 | A |
| Qg (Typ.) | Qg | 6 | 8 | nC |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 60 | -60 | V |
| Gate-Source Voltage | VGS | 20 | 20 | V |
| Continuous Drain Current (TC = 25 C) | ID | 5.3 | -4.9 | A |
| Pulsed Drain Current (10 s Pulse Width) | IDM | 20 | -25 | A |
| Source-Drain Current (Diode Current) (TC = 25 C) | IS | 2.6 | -2.8 | A |
| Single Pulse Avalanche Current (L = 0.1 mH) | IAS | 11 | 15 | A |
| Single Pulse Avalanche Energy (L = 0.1 mH) | EAS | 6.1 | 11 | mJ |
| Maximum Power Dissipation (TC = 25 C) | PD | 3.1 | 3.4 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | C | |
| THERMAL RESISTANCE RATINGS | ||||
| Maximum Junction-to-Ambient (t 10 s) | RthJA (Typ.) | 55 | 53 | C/W |
| Maximum Junction-to-Foot (Drain) (Steady State) | RthJF (Typ.) | 33 | 30 | C/W |
| SPECIFICATIONS (TJ = 25 C, unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) | VDS | 60 (N-Ch) -60 (P-Ch) | - | V |
| Gate Threshold Voltage (VDS = VGS, ID = 250 A) | VGS(th) | 1 to 3 (N-Ch) -1 to -3 (P-Ch) | - | V |
| Zero Gate Voltage Drain Current (VDS = 60 V, VGS = 0 V) | IDSS | 1 (N-Ch) -1 (P-Ch) | - | A |
| Drain-Source On-State Resistance (VGS = 10 V, ID = 4.3 A) | RDS(on) | 0.02 | - | |
| Drain-Source On-State Resistance (VGS = -10 V, ID = -3.1 A) | RDS(on) | - | 0.055 | |
| Drain-Source On-State Resistance (VGS = 4.5 V, ID = 3.9 A) | RDS(on) | 0.02 | - | |
| Drain-Source On-State Resistance (VGS = -4.5 V, ID = -0.2 A) | RDS(on) | - | 0.060 | |
| Forward Transconductance (VDS = 15 V, ID = 4.3 A) | gfs | 15 | - | S |
| Forward Transconductance (VDS = -15 V, ID = -3.1 A) | gfs | - | 8.5 | S |
| Input Capacitance | Ciss | 665 (N-Ch) 650 (P-Ch) | - | pF |
| Output Capacitance | Coss | 75 (N-Ch) 95 (P-Ch) | - | pF |
| Reverse Transfer Capacitance | Crss | 40 (N-Ch) 60 (P-Ch) | - | pF |
| Total Gate Charge (VDS = 30 V, VGS = 10 V, ID = 4.3 A) | Qg | 13 | - | nC |
| Total Gate Charge (VDS = -30 V, VGS = -10 V, ID = -3.1 A) | Qg | - | 14.5 | nC |
| Turn-On Delay Time (VDD = 30 V, RL = 8.8 , ID 3.4 A, VGEN = 4.5 V, Rg = 1 ) | td(on) | 15 (N-Ch) 30 (P-Ch) | - | ns |
| Turn-Off Delay Time (VDD = 30 V, RL = 8.8 , ID 3.4 A, VGEN = 4.5 V, Rg = 1 ) | td(off) | 15 (N-Ch) 40 (P-Ch) | - | ns |
| Turn-On Delay Time (VDD = 30 V, RL = 8.8 , ID 3.4 A, VGEN = 10 V, Rg = 1 ) | td(on) | 10 (N-Ch) 10 (P-Ch) | - | ns |
| Turn-Off Delay Time (VDD = 30 V, RL = 8.8 , ID 3.4 A, VGEN = 10 V, Rg = 1 ) | td(off) | 20 (N-Ch) 35 (P-Ch) | - | ns |
| Continuous Source-Drain Diode Current (TC = 25 C) | IS | 2.6 | -2.8 | A |
| Body Diode Voltage (IS = 1.7 A) | VSD | 0.8 to 1.2 (N-Ch) | -0.8 to -1.2 (P-Ch) | V |
| Body Diode Reverse Recovery Time (IF = 1.7 A, dI/dt = 100 A/s, TJ = 25 C) | trr | 30 to 60 (N-Ch) 30 to 50 (P-Ch) | - | ns |
| Body Diode Reverse Recovery Charge (IF = 1.7 A, dI/dt = 100 A/s, TJ = 25 C) | Qrr | 32 to 50 (N-Ch) 35 to 60 (P-Ch) | - | nC |
2504180925_VBsemi-Elec-SI4559ADY-T1-E3-VB_C5878842.pdf
Related Products
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
