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quality High speed switching VBsemi Elec VBE16I10 600V IGBT for SMPS and telecom power supply solutions factory
quality High speed switching VBsemi Elec VBE16I10 600V IGBT for SMPS and telecom power supply solutions factory

High speed switching VBsemi Elec VBE16I10 600V IGBT for SMPS and telecom power supply solutions

Key Attributes
Model Number: VBE16I10
Product Custom Attributes
Mfr. Part #:
VBE16I10
Package:
TO-252
Product Description

Product Overview

The VBE16I10 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It features very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply and industrial applications. The device is avalanche energy rated (UIS) and offers a maximum junction temperature of 175C. Key application areas include telecommunications (server and telecom power supplies), lighting (HID, fluorescent ballast), consumer and computing (ATX power supplies), industrial (welding, battery chargers), renewable energy (solar PV inverters), and general switch mode power supplies (SMPS).

Product Attributes

  • Brand: VBsemi
  • Package Type: TO-252
  • Technology: Trench and Fieldstop IGBT
  • Certifications: RoHS compliant, Halogen-free

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Collector-Emitter Voltage VCE VGE = 0 V, IC = 250 A 600 V
Gate-Source Threshold Voltage VGE(th) VCE = VGE, ID = 250 A 4 5 6 V
Zero Gate Voltage Collector Current ICES VCE = 600 V, VGE = 0 V, TJ = 25 C 1 20 A
Zero Gate Voltage Collector Current ICES VCE = 600 V, VGE = 0 V, TJ = 150 C 1000 A
Gate-Emitter Leakage Current IGES VCE = 0 V, VGS = 20 V 100 nA
Collector-Emitter Saturation Voltage VCE(sat) VGE = 15 V, IC = 10 A 1.7 V
Forward Transconductance gfs VCE = 20 V, IC = 10 A 40 S
Input Capacitance Cies VGE = 0 V, VCE = 25 V, f = 500 KHz 1800 pF
Output Capacitance Coes VGE = 0 V, VCE = 25 V, f = 500 KHz 80 pF
Reverse Transfer Capacitance Cres VGE = 0 V, VCE = 25 V, f = 500 KHz 22 pF
Turn-on Energy Eon VCE = 400 V, VGE = 15 V, IC = 10 A, Rg = 10 0.60 J
Turn-off Energy Eoff VCE = 400 V, VGE = 15 V, IC = 10 A, Rg = 10 0.30 J
Total Gate Charge Qg VGE = 15 V, IC = 10 A, VCE = 400 V 23 nC
Gate-Emitter Charge Qge VGE = 15 V, IC = 10 A, VCE = 400 V 12 nC
Gate-Collector Charge Qgc VGE = 15 V, IC = 10 A, VCE = 400 V 30 nC
Turn-On Delay Time td(on) VCE = 400 V, VGE = 15 V, IC = 10 A, Rg = 10 50 ns
Rise Time tr VCE = 400 V, VGE = 15 V, IC = 10 A, Rg = 10 30 ns
Turn-Off Delay Time td(off) VCE = 400 V, VGE = 15 V, IC = 10 A, Rg = 10 124 ns
Fall Time tf VCE = 400 V, VGE = 15 V, IC = 10 A, Rg = 10 30 ns
Internal Emitter Inductance LE Measured 5 mm 13 nH
Diode Forward Current IF 10 A
Pulsed Diode Forward Current IFM 30 A
Diode Forward Voltage VF IF = 10 A 2.1 V
Reverse Recovery Time trr TJ = 25 C, IF = 10 A, dIF/dt = 200 A/s, VR = 400 V 90 ns
Reverse Recovery Charge Qrr TJ = 25 C, IF = 10 A, dIF/dt = 200 A/s, VR = 400 V 0.48 C
Reverse Recovery Current IRRM TJ = 25 C, IF = 10 A, dIF/dt = 200 A/s, VR = 400 V 8 A
Maximum Junction-to-Case Thermal Resistance RthJC 1.5 C/W
Maximum Junction-to-Ambient Thermal Resistance RthJA 40 C/W
Maximum Junction Temperature TJ 175 C
Operating Junction and Storage Temperature Range Tstg -55 175 C
Maximum Power Dissipation PD TC = 25 C 83 W
Maximum Power Dissipation PD TC = 100 C 33 W
Collector-Emitter Voltage (Pulsed) VCE 600 V
Continuous Collector Current IC TC = 25 C 20 A
Continuous Collector Current IC TC = 100 C 10 A
Pulsed Collector Current ICM a 30 A
Short Circuit Withstand Time tSC TC = 150 C, VGE = 15 V, VCE 400 V 3 s
Short Circuit Withstand Time tSC TC = 100 C, VGE = 15 V, VCE 330 V 5 s
Soldering Recommendations (Peak Temperature) for 10 s 260 C

2412131800_VBsemi-Elec-VBE16I10_C42412434.pdf

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