Miniature Glass Passivated Single Phase Bridge Rectifier VISHAY DF02S-E3 77 Surface Mount for Power Supplies
Product Overview
The Vishay General Semiconductor DF005S, DF01S, DF02S, DF04S, DF06S, DF08S, and DF10S are miniature glass passivated single-phase surface-mount bridge rectifiers. These rectifiers are ideal for automated placement and offer high surge current capability. They meet MSL level 1 requirements and are suitable for general-purpose AC/DC full-wave rectification in various applications including SMPS, lighting ballasts, adapters, battery chargers, home appliances, office equipment, and telecommunication systems.
Product Attributes
- Brand: Vishay General Semiconductor
- Certifications: UL recognition, file number E54214
- Material: Molding compound meets UL 94 V-0 flammability rating
- Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102
- E3 suffix meets JESD 201 class 1A whisker test
- Polarity: As marked on body
- Compliance: RoHS-compliant (E3 suffix)
Technical Specifications
| Parameter | Symbol | DF005S | DF01S | DF02S | DF04S | DF06S | DF08S | DF10S | Unit |
| Device marking code | DF005S | DF01S | DF02S | DF04S | DF06S | DF08S | DF10S | ||
| Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum average forward output rectified current at TA = 40 C | IF(AV) | 1.0 | A | ||||||
| Peak forward surge current single half sine-wave superimposed on rated load | IFSM | 50 | A | ||||||
| Rating for fusing (t < 8.3 ms) | I2t | 10 | A2s | ||||||
| Operating junction and storage temperature range | TJ, TSTG | -55 to +150 | C | ||||||
| Maximum instantaneous forward voltage drop per diode at IF = 1.0 A | VF | 1.1 | V | ||||||
| Maximum DC reverse current at rated DC blocking voltage per diode TA = 25 C | IR | 5.0 | A | ||||||
| Maximum DC reverse current at rated DC blocking voltage per diode TA = 125 C | IR | 500 | A | ||||||
| Typical junction capacitance per diode (f = 1.0 MHz, VR = 4.0 V) | CJ | 25 | pF | ||||||
| Typical thermal resistance (1) | RJA | 40 | C/W | ||||||
| Typical thermal resistance (1) | RJL | 15 | C/W | ||||||
2410121844_VISHAY-DF02S-E3-77_C3008900.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.