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quality Durable 1200V 40A Trench Field Stop IGBT SPTECH SPT40N120T1B with easy parallel switching capability factory
quality Durable 1200V 40A Trench Field Stop IGBT SPTECH SPT40N120T1B with easy parallel switching capability factory

Durable 1200V 40A Trench Field Stop IGBT SPTECH SPT40N120T1B with easy parallel switching capability

Key Attributes
Model Number: SPT40N120T1B
Product Custom Attributes
Td(off):
230ns
Pd - Power Dissipation:
416W
Operating Temperature:
-40℃~+150℃@(Tj)
Td(on):
55ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
-
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
Gate Charge(Qg):
270nC@40A,15V
Reverse Recovery Time(trr):
-
Switching Energy(Eoff):
1.5mJ
Turn-On Energy (Eon):
2.4mJ
Mfr. Part #:
SPT40N120T1B
Package:
TO-247-3
Product Description

Product Overview

The SPT40N120T1B is a 1200V, 40A Trench Field Stop IGBT designed for high reliability and ruggedness. It features Trench-Stop Technology for tight parameter distribution, stable temperature behavior, and easy parallel switching due to a positive temperature coefficient in VCE(SAT). With a short circuit withstand time of 10s and enhanced avalanche capability, this IGBT is ideal for demanding applications.

Product Attributes

  • Brand: Superic
  • Model: SPT40N120T1B

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.Unit
IGBT Characteristics
Collector-Emitter Breakdown VoltageBVCESVGE=0V , IC=250A12001300-V
Gate threshold voltageVGE(th)VGE=VCE, IC=250A5.15.86.4V
Collector-Emitter Saturation voltageVCE(sat)VGE=15V, IC=40A, Tj = 25C-1.7-V
Collector-Emitter Saturation voltageVCE(sat)VGE=15V, IC=40A, Tj = 150C-2.1-V
Zero gate voltage collector currentICESVCE = 1200V, VGE = 0V, Tj = 25C--10A
Zero gate voltage collector currentICESVCE = 1200V, VGE = 0V, Tj = 150C--2500A
Gate-emitter leakage currentIGESVCE = 0V, VGE = 20V--100nA
TransconductancegfsVCE=20V, IC=15A-15-S
Input capacitanceCiesVCE = 25V, VGE = 0V, f = 1MHz-4400-pF
Output capacitanceCoesVCE = 25V, VGE = 0V, f = 1MHz-180-pF
Reverse transfer capacitanceCresVCE = 25V, VGE = 0V, f = 1MHz-100-pF
Gate chargeQGVCC = 960V, IC = 40A, VGE = 15V-270-nC
Short circuit collector currentICSCVGE=15V,tSC10us, VCC=600V, Tjstart=25C-240-A
Turn-on delay timetd(on)VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12, Tj = 25C-55-ns
Rise timetrVCC = 600V, IC = 40A, VGE = 0/15V, Rg=12, Tj = 25C-20-ns
Turn-on energyEonVCC = 600V, IC = 40A, VGE = 0/15V, Rg=12, Tj = 25C-2.4-mJ
Turn-off delay timetd(off)VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12, Tj = 25C-230-ns
Fall timetfVCC = 600V, IC = 40A, VGE = 0/15V, Rg=12, Tj = 25C-160-ns
Turn-off energyEoffVCC = 600V, IC = 40A, VGE = 0/15V, Rg=12, Tj = 25C-1.5-mJ
Diode Characteristics
Diode Forward VoltageVFMIF = 40A, Tj = 25C-3.5-V
Reverse Recovery TimeTrrIF= 40A, VR = 600V, di/dt= 400A/s, Tj = 25C-190-ns
Reverse Recovery CurrentIrrIF= 40A, VR = 600V, di/dt= 400A/s, Tj = 25C-6-A
Reverse Recovery ChargeQrrIF= 40A, VR = 600V, di/dt= 400A/s, Tj = 25C-530-nC
Maximum Ratings
Collector-Emitter Breakdown VoltageVCE--1200-V
DC collector currentICTC = 25C-80-A
DC collector currentICTC = 100C-40-A
Diode Forward currentIFTC = 25C-80-A
Diode Forward currentIFTC = 100C-40-A
Pulsed Collector CurrentICpulslimited by Tjmax-160-A
Diode Pulsed CurrentIFpulslimited by Tjmax-160-A
Short Circuit Withstand TimeTscVGE= 15V, VCE 600V-10-s
Power dissipationPtotTj=25-416-W
Operating junction temperatureTj--40-150C
Storage temperatureTs--55-150C
Soldering temperature-wave soldering 1.6mm from case for 10s--260C
Thermal Resistance
IGBT thermal resistance, junction - caseR(j-c)---0.3K/W
Diode thermal resistance, junction - caseR(j-c)---0.6K/W
Thermal resistance, junction - ambientR(j-a)---40K/W

Applications

Frequency Converters, Motor Drive.


2505231205_SPTECH-SPT40N120T1B_C480185.pdf

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