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quality Durable industrial thyristor VISHAY VS-ST180C12C1 with metal case and ceramic insulator construction factory
quality Durable industrial thyristor VISHAY VS-ST180C12C1 with metal case and ceramic insulator construction factory

Durable industrial thyristor VISHAY VS-ST180C12C1 with metal case and ceramic insulator construction

Key Attributes
Model Number: VS-ST180C12C1
Product Custom Attributes
Holding Current (Ih):
600mA
Current - Gate Trigger(Igt):
-
Voltage - On State(Vtm):
1.96V
Current - On State(It(RMS)):
660A
Peak Off - State Voltage(Vdrm):
1.2kV
SCR Type:
1 SCR
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
3V
Mfr. Part #:
VS-ST180C12C1
Package:
TO-200AB
Product Description

Product Overview

The Vishay Semiconductors VS-ST180C Series Phase Control Thyristors, featuring a hockey PUK version and center amplifying gate, are designed for industrial-level applications. These thyristors offer a metal case with a ceramic insulator and conform to the international standard A-PUK (TO-200AB) package. They are ideal for use in DC motor controls, controlled DC power supplies, and AC controllers, providing reliable performance for demanding industrial environments.

Product Attributes

  • Brand: Vishay Semiconductors
  • Case Style: A-PUK (TO-200AB)
  • Material: Metal case with ceramic insulator
  • Design Level: Industrial
  • Compliance: Refer to www.vishay.com/doc?99912 for material categorization and compliance definitions.

Technical Specifications

Parameter Symbol Test Conditions Values Units
Average On-State Current IT(AV) Ths = 55 C 350 A
RMS On-State Current IT(RMS) Ths = 25 C 660 A
Peak Surge Current (50 Hz) ITSM 50 Hz 5000 A
It (50 Hz) It 50 Hz 125 kAs
Repetitive Peak Off-State Voltage VDRM/VRRM 400 to 2000 V
Typical Turn-off Time tq ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s 100 s
Junction Temperature Range TJ -40 to +125 C
Maximum Average Gate Power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum Operating Junction Temperature TJ -40 to 125 C
Maximum Storage Temperature TStg -40 to 150 C
Thermal Resistance, Junction-to-Heatsink (DC, single side cooled) RthJ-hs DC operation single side cooled 0.17 K/W
Thermal Resistance, Junction-to-Heatsink (DC, double side cooled) RthJ-hs DC operation double side cooled 0.08 K/W
Approximate Weight 50 g
Mounting Force 10 % 4900 (500) N (kg)
Package A-PUK (TO-200AB)
Circuit Configuration Single SCR
On-State Voltage Drop (Typ.) VTM Ipk = 750 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.96 V
Maximum Holding Current IH TJ = 25 C, anode supply 12 V resistive load 600 mA
Maximum Critical Rate of Rise of Off-State Voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/s
Maximum Peak Gate Power PGM TJ = TJ maximum, tp 5 ms 10 W
Maximum Peak Positive Gate Current IGM TJ = TJ maximum, tp 5 ms 3.0 A
Maximum Peak Positive Gate Voltage +VGM 20 V
Maximum Peak Negative Gate Voltage -VGM 5.0 V
DC Gate Current Required to Trigger (TJ = 25 C) IGT TJ = 25 C 90 mA
DC Gate Voltage Required to Trigger (TJ = 25 C) VGT TJ = 25 C 1.8 V
Maximum Gate Current Not to Trigger (TJ = TJ maximum) IGD TJ = TJ maximum 10 mA
Maximum Gate Voltage Not to Trigger VGD 0.25 V

Dimensions: See www.vishay.com/doc?95074 for A-PUK (TO-200AB) dimensions.

Ordering Information: VS-ST180C [Voltage Code] [Case Code]

Example: VS-ST180C20CPUK

  • VS = Vishay Semiconductors
  • ST180C = Product Series
  • 20 = Voltage Code (2000 V VRRM)
  • C = Ceramic PUK
  • PUK = A-PUK (TO-200AB) Case

Note: The document is subject to change without notice. Specific disclaimers apply and can be found at www.vishay.com/doc?91000.


2411272151_VISHAY-VS-ST180C12C1_C17688886.pdf

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