NPN transistor ST Semtech PZTA42Q designed for high voltage switching and amplification applications
Key Attributes
Model Number:
PZTA42Q
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Pd - Power Dissipation:
1.5W
Mfr. Part #:
PZTA42Q
Package:
SOT-223
Product Description
Product Overview
The PZTA42Q-HAF is an NPN Silicon Epitaxial Planar High Voltage Transistor designed for various electronic applications. It features Halogen and Antimony Free (HAF) compliance and is RoHS compliant, offering an environmentally conscious solution. This transistor boasts high voltage capabilities with a Collector Emitter Voltage (VCEO) of 300V and a Collector Current (IC) of up to 500mA, making it suitable for high-voltage switching and amplification circuits.
Product Attributes
- Brand: (Implied by logo)
- Certifications: Halogen and Antimony Free (HAF), RoHS compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Absolute Maximum Ratings | ||||
| Collector Base Voltage | VCBO | 300 | V | |
| Collector Emitter Voltage | VCEO | 300 | V | |
| Emitter Base Voltage | VEBO | 6 | V | |
| Collector Current | IC | 500 | mA | |
| Power Dissipation | Ptot | 1.5 | W | |
| Operating Junction Temperature Range | Tj | -55 to +150 | ||
| Storage Temperature Range | Tstg | -55 to +150 | ||
| Thermal Resistance Ratings | ||||
| Thermal Resistance from Junction to Ambient | RJA | 83.3 | /W | 1) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. |
| Characteristics at Ta = 25 | ||||
| DC Current Gain (VCE = 10 V, IC = 1 mA) | hFE | 25 | - | |
| DC Current Gain (VCE = 10 V, IC = 10 mA) | hFE | 40 | - | |
| DC Current Gain (VCE = 10 V, IC = 30 mA) | hFE | 40 | - | |
| Collector Base Cutoff Current (VCB = 200 V) | ICBO | -100 | nA | |
| Emitter Base Cutoff Current (VEB = 6 V) | IEBO | -100 | nA | |
| Collector Emitter Breakdown Voltage (IC = 1 mA) | V(BR)CEO | 300 | V | |
| Collector Base Breakdown Voltage (IC = 100 A) | V(BR)CBO | 300 | V | |
| Emitter Base Breakdown Voltage (IE = 100 A) | V(BR)EBO | 6 | V | |
| Collector Emitter Saturation Voltage (IC = 20 mA, IB = 2 mA) | VCE(sat) | -500 | mV | |
| Base Emitter Saturation Voltage (IC = 20 mA, IB = 2 mA) | VBE(sat) | -900 | mV | |
| Current Gain Bandwidth Product (VCE = 20 V, IC = 10 mA, f = 100 MHz) | fT | 50 | MHz | |
| Collector Output Capacitance (VCB = 20 V, IE = 0, f = 1 MHz) | Cob | -3 | pF | |
2410121314_ST-Semtech-PZTA42Q_C7464232.pdf
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