Industrial Grade Phase Control Thyristors VISHAY VS-ST180C20C1 for DC Motor and AC Controller Systems
Key Attributes
Model Number:
VS-ST180C20C1
Product Custom Attributes
Holding Current (Ih):
600mA
Current - Gate Trigger(Igt):
150mA
Voltage - On State(Vtm):
1.96V
Current - On State(It(RMS)):
660A
Peak Off - State Voltage(Vdrm):
2kV
SCR Type:
1 SCR
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
3V
Mfr. Part #:
VS-ST180C20C1
Package:
TO-200AB
Product Description
Product Overview
The Vishay Semiconductors VS-ST180C Series are Phase Control Thyristors featuring a center amplifying gate and a metal case with a ceramic insulator. Designed and qualified for industrial-level applications, these thyristors are suitable for DC motor controls, controlled DC power supplies, and AC controllers. They offer robust performance with a high average on-state current of 350 A and voltage ratings up to 2000 V.
Product Attributes
- Brand: Vishay Semiconductors
- Case Style: A-PUK (TO-200AB)
- Material Categorization: For definitions of compliance, please see www.vishay.com/doc?99912
Technical Specifications
| Parameter | Test Conditions | Values | Units | ||
|---|---|---|---|---|---|
| Primary Characteristics | |||||
| Average On-State Current (IT(AV)) | 350 | A | |||
| Repetitive Peak Off-State Voltage (VDRM/VRRM) | 400, 800, 1200, 1600, 1800, 2000 | V | |||
| On-State Voltage (VTM) | Ipk = 750 A, TJ = TJ maximum, tp = 10 ms sine pulse | 1.96 | V | ||
| Gate Trigger Current (IGT) | TJ = 25 C | 90 | mA | ||
| Junction Temperature (TJ) | -40 to +125 | C | |||
| Package | A-PUK (TO-200AB) | ||||
| Circuit Configuration | Single SCR | ||||
| Major Ratings and Characteristics | |||||
| Average On-State Current (IT(AV)) | Ths = 55 C | 350 | A | ||
| RMS On-State Current (IT(RMS)) | Ths = 25 C | 660 | A | ||
| Peak Surge Current (ITSM) | 50 Hz, t = 10 ms | 5000 | A | ||
| Peak Surge Current (ITSM) | 60 Hz, t = 8.3 ms | 5230 | A | ||
| It Rating | 50 Hz, t = 10 ms | 125 | kAs | ||
| It Rating | 60 Hz, t = 8.3 ms | 114 | kAs | ||
| Repetitive Peak Off-State Voltage (VDRM/VRRM) | 400 to 2000 | V | |||
| Typical Turn-off Time (tq) | 100 | s | |||
| Junction Temperature (TJ) | -40 to +125 | C | |||
| Voltage Ratings | |||||
| Type Number | Voltage Code | VDRM/VRRM, Maximum Repetitive Peak and Off-State Voltage | VRSM, Maximum Non-Repetitive Peak Voltage | IDRM/IRRM Maximum at TJ = TJ Maximum | mA |
| VS-ST180C..C | 04 | 400 | 500 | 30 | |
| VS-ST180C..C | 08 | 800 | 900 | 12 | |
| VS-ST180C..C | 12 | 1200 | 1300 | 16 | |
| VS-ST180C..C | 16 | 1600 | 1700 | 18 | |
| VS-ST180C..C | 18 | 1800 | 1900 | 20 | |
| VS-ST180C..C | 20 | 2000 | 2100 | ||
| Absolute Maximum Ratings | |||||
| Maximum average on-state current (IT(AV)) | 180 conduction, half sine wave, double side (single side) cooled | 350 (140) | A | ||
| Heatsink Temperature (Ths) | 55 (85) | C | |||
| Maximum RMS on-state current (IT(RMS)) | DC at 25 C heatsink temperature, double side cooled | 660 | A | ||
| Maximum peak, one-cycle non-repetitive surge current (ITSM) | t = 10 ms, no voltage reapplied, sinusoidal half wave, initial TJ = TJ maximum | 5000 | A | ||
| Maximum peak, one-cycle non-repetitive surge current (ITSM) | t = 8.3 ms, 100 % VRRM reapplied | 5230 | A | ||
| Maximum It for fusing (It) | t = 10 ms, no voltage reapplied | 125 | kAs | ||
| Maximum It for fusing (It) | t = 8.3 ms, 100 % VRRM reapplied | 114 | kAs | ||
| Maximum It for fusing (It) | t = 0.1 to 10 ms, no voltage reapplied | 1250 | kAs | ||
| Low level value of threshold voltage (VT(TO)1) | (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum | 1.08 | V | ||
| High level value of threshold voltage (VT(TO)2) | (I > x IT(AV)), TJ = TJ maximum | 1.14 | V | ||
| Low level value of on-state slope resistance (rt1) | (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum | 1.18 | m | ||
| High level value of on-state slope resistance (rt2) | (I > x IT(AV)), TJ = TJ maximum | 1.14 | m | ||
| Maximum on-state voltage (VTM) | Ipk = 750 A, TJ = TJ maximum, tp = 10 ms sine pulse | 1.96 | V | ||
| Maximum holding current (IH) | TJ = 25 C, anode supply 12 V resistive load | 600 | mA | ||
| Maximum (typical) latching current (IL) | 1000 (300) | ||||
| Switching Parameters | |||||
| Maximum non-repetitive rate of rise of turned-on current (dI/dt) | Gate drive 20 V, 20 , tr 1 s, TJ = TJ maximum, anode voltage 80 % VDRM | 1000 | A/s | ||
| Typical delay time (td) | Gate current 1 A, dIg/dt = 1 A/s, Vd = 0.67 % VDRM, TJ = 25 C | 1.0 | s | ||
| Typical turn-off time (tq) | ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V, 100 , tp = 500 s | 100 | s | ||
| Blocking Parameters | |||||
| Maximum critical rate of rise of off-state voltage (dV/dt) | TJ = TJ maximum, linear to 80 % rated VDRM | 500 | V/s | ||
| Maximum peak reverse and off-state leakage current (IRRM, IDRM) | TJ = TJ maximum, rated VDRM/VRRM applied | 30 | mA | ||
| Triggering Parameters | |||||
| Maximum peak gate power (PGM) | TJ = TJ maximum, tp 5 ms | 10 | W | ||
| Maximum average gate power (PG(AV)) | TJ = TJ maximum, f = 50 Hz, d% = 50 | 2.0 | |||
| Maximum peak positive gate current (IGM) | TJ = TJ maximum, tp 5 ms | 3.0 | A | ||
| Maximum peak positive gate voltage (+VGM) | 20 | V | |||
| Maximum peak negative gate voltage (-VGM) | 5.0 | V | |||
| DC gate current required to trigger (IGT) | TJ = -40 C | 180 | mA | ||
| DC gate current required to trigger (IGT) | TJ = 25 C | 90 to 150 | mA | ||
| DC gate current required to trigger (IGT) | TJ = 125 C | 40 | mA | ||
| DC gate voltage required to trigger (VGT) | TJ = -40 C | 2.9 | V | ||
| DC gate voltage required to trigger (VGT) | TJ = 25 C | 1.8 to 3.0 | V | ||
| DC gate voltage required to trigger (VGT) | TJ = 125 C | 1.2 | V | ||
| DC gate current not to trigger (IGD) | TJ = TJ maximum | 10 | mA | ||
| DC gate voltage not to trigger (VGD) | 0.25 | V | |||
| Thermal and Mechanical Specifications | |||||
| Maximum operating junction temperature range (TJ) | -40 to 125 | C | |||
| Maximum storage temperature range (TStg) | -40 to 150 | C | |||
| Maximum thermal resistance, junction to heatsink (RthJ-hs) | DC operation, single side cooled | 0.17 | K/W | ||
| Maximum thermal resistance, junction to heatsink (RthJ-hs) | DC operation, double side cooled | 0.08 | K/W | ||
| Maximum thermal resistance, case to heatsink (RthC-hs) | DC operation, single side cooled | 0.033 | K/W | ||
| Maximum thermal resistance, case to heatsink (RthC-hs) | DC operation, double side cooled | 0.017 | K/W | ||
| Mounting force | 10 % | 4900 (500) | N (kg) | ||
| Approximate weight | 50 | g | |||
| Case style | A-PUK (TO-200AB) |
Ordering Information
Device code: VS-ST180C20CPBF
- VS: Vishay Semiconductors product
- ST180C: Essential part number
- 20: Voltage code (VRRM = 2000 V)
- C: PUK case
- (b): Critical dV/dt selection (None = 500 V/s, L = 1000 V/s)
- (1): Eyelet terminals (gate and auxiliary cathode unsoldered leads)
- (2): Fast-on terminals (gate and auxiliary cathode unsoldered leads)
- (3): Eyelet terminals (gate and auxiliary cathode soldered leads)
- (4): Fast-on terminals (gate and auxiliary cathode soldered leads)
Links to Related Documents:
- Dimensions: www.vishay.com/doc?95074
2411272151_VISHAY-VS-ST180C20C1_C17668858.pdf
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