NPN Transistor Suzhou Good-Ark Elec MMBT596-DV4 with 30V Breakdown Voltage in Compact SOT-23 Package

Key Attributes
Model Number: MMBT596-DV4
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Transition Frequency(fT):
170MHz
Vce Saturation(VCE(sat)):
600mV@700mA,70mA
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
700mA
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
MMBT596-DV4
Package:
SOT-23
Product Description

Product Overview

The MMBT596 is an NPN transistor featuring high DC current gain. It is complementary to the MMBT624 and MMBT596 transistors, offering reliable performance for various electronic applications.

Product Attributes

  • Brand: Goodarksemi (implied by URL)
  • Package Type: SOT-23

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
Collector-Base VoltageVCBO30----V
Collector-Emitter VoltageVCEO25----V
Emitter-Base VoltageVEBO5----V
Collector CurrentIC----700mA
Collector Power DissipationPC----200mW
Thermal Resistance Junction to AmbientRJA--625--C/W
Junction TemperatureTJ-55--+150C
Storage TemperatureTstg-55--+150C
Collector-base Breakdown VoltageV(BR)CBOIR=100A, IE=030----V
Collector-emitter Breakdown VoltageV(BR)CEOIC=1mA, IB=025----V
Emitter-base Breakdown VoltageV(BR)EBOIE=100A, IC=05----V
Collector Cut-off CurrentICBOVCB=30V, IE=0----0.1A
Emitter Cut-off CurrentIEBOVEB=5V, IC=0----0.1A
DC Current GainhFECE=1V, IC=100mA110--400
CE=1V, IC=700mA50----
Classification of hFE(1)DV1110-180
DV2135-220
DV3170-270
DV4200-320
DV5250-400
Collector-emitter Saturation VoltageVCE(sat)C=700mA, IB=70mA----0.6V
Base-emitter VoltageVBECE=6V, IC=10mA0.6--0.7V
Transition FrequencyfTVCE=6V, IC=10mA170----MHz
Collector Output CapacitanceCobVCB=6V, IE=0, f=10MHZ--12--pF

2411201845_Suzhou-Good-Ark-Elec-MMBT596-DV4_C19841309.pdf

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