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quality performance surface mount rectifier Taiwan Semiconductor SFAS803GHMNG with glass passivated junction and loss factory
quality performance surface mount rectifier Taiwan Semiconductor SFAS803GHMNG with glass passivated junction and loss factory

performance surface mount rectifier Taiwan Semiconductor SFAS803GHMNG with glass passivated junction and loss

Key Attributes
Model Number: SFAS803GHMNG
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
125A
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
150V
Reverse Leakage Current (Ir):
10uA
Current - Rectified:
8A
Mfr. Part #:
SFAS803GHMNG
Package:
D2PAK
Product Description

Product Overview

The SFAS801G - SFAS808G series are glass passivated junction surface mount super fast rectifiers from Taiwan Semiconductor. Designed for automated placement, these high-efficiency rectifiers feature low forward voltage (VF), high surge current capability, and low power loss. They are ideal for applications requiring fast switching speeds and reliable performance. The series is halogen-free and compliant with RoHS and WEEE directives.

Product Attributes

  • Brand: Taiwan Semiconductor
  • Material: Glass passivated junction chip
  • Color: Green compound (halogen-free) available with suffix "G"
  • Certifications: AEC-Q101 qualified (with suffix "H"), UL flammability classification rating 94V-0, Compliant to RoHS Directive 2011/65/EU, WEEE 2002/96/EC
  • Terminal: Matte tin plated leads, solderable per JESD22-B102
  • Whisker Test: Meet JESD 201 class 2
  • Moisture Sensitivity Level: Level 1, per J-STD-020

Technical Specifications

ParameterSymbolSFAS801GSFAS802GSFAS803GSFAS804GSFAS805GSFAS806GSFAS807GSFAS808GUnit
Maximum repetitive peak reverse voltageVRRM50100150200300400500600V
Maximum RMS voltageVRMS3570105140210280350420V
Maximum DC blocking voltageVDC50100150200300400500600V
Maximum average forward rectified currentIF(AV)88888888A
Peak forward surge current, 8.3 ms single half sine-waveIFSM125A
Maximum reverse recovery time (Note 1)trr35ns
Maximum instantaneous forward voltageVF0.951.31.7-----V
Maximum reverse current @ rated VR (TJ=25C)IR10A
Maximum reverse current @ rated VR (TJ=100C)IR400A
Typical junction capacitance (Note 2)CJ80pF
Typical thermal resistanceRJC2.2C/W
Operating junction temperature rangeTJ - 55 to +150C
Storage temperature rangeTSTG - 55 to +150C

2304140030_Taiwan-Semiconductor-SFAS803GHMNG_C485061.pdf

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