power rectifier Taiwan Semiconductor US1J HR3G designed for automated electronic assembly processes
Key Attributes
Model Number:
US1J HR3G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Recovery Time (trr):
75ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
600V
Diode Configuration:
1 Independent
Voltage - Forward(Vf@If):
1.7V@1A
Reverse Leakage Current (Ir):
5uA
Current - Rectified:
1A
Mfr. Part #:
US1J HR3G
Package:
SMA(DO-214AC)
Product Description
Product Overview
The US1A US1M series are high-efficiency surface mount rectifiers from Taiwan Semiconductor, designed for demanding applications requiring fast switching and low voltage drop. Featuring glass passivated chip junctions and ideal for automated placement, these rectifiers offer ultrafast recovery times for enhanced efficiency. They are compliant with RoHS and Halogen-free standards, making them suitable for environmentally conscious designs. Applications include DC to DC converters, switching mode converters and inverters, lighting, snubber circuits, and freewheeling applications.
Product Attributes
- Brand: Taiwan Semiconductor
- Series: US1A US1M
- Package: DO-214AC (SMA)
- Certifications: RoHS Compliant, Halogen-free according to IEC 61249-2-21
- Moisture Sensitivity Level: Level 1, per J-STD-020
- Flammability Rating: UL 94V-0
- Terminal Plating: Matte tin plated leads, solderable per J-STD-002
- Whisker Test: Meet JESD 201 class 2
Technical Specifications
| Parameter | Symbol | US1A | US1B | US1D | US1G | US1J | US1K | US1M | Unit | Conditions |
| Repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V | (TA = 25C unless otherwise noted) |
| Reverse voltage, total rms value | VR(RMS) | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V | |
| Forward current | IF | 1 | 1 | 1 | 1 | 1 | 1 | 1 | A | |
| Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load | IFSM | 30 | 30 | 30 | 30 | 30 | 30 | 30 | A | |
| Junction temperature | TJ | - 55 to +150 | C | |||||||
| Storage temperature | TSTG | - 55 to +150 | C | |||||||
| Forward voltage | VF | - 1.0 | - 1.7 | V | IF = 1A, TJ = 25C | |||||
| Reverse current @ rated VR | IR | - 5 | A | TJ = 25C | ||||||
| Reverse current @ rated VR | IR | - 150 | A | TJ = 125C | ||||||
| Junction capacitance | CJ | 15 | 10 | pF | 1MHz, VR = 4.0V | |||||
| Reverse recovery time | trr | - 50 | - 75 | ns | IF = 0.5A, IR = 1.0A, Irr = 0.25A | |||||
| Junction-to-lead thermal resistance | RJL | 27 | C/W | TYP | ||||||
| Junction-to-ambient thermal resistance | RJA | 75 | C/W | TYP | ||||||
2301040930_Taiwan-Semiconductor-US1J-HR3G_C5345795.pdf
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