WEIDA T835 triacs offering 80 ampere surge peak on state current for demanding electrical environments
Key Attributes
Model Number:
T835
Product Custom Attributes
Holding Current (Ih):
45mA
Current - Gate Trigger(Igt):
35mA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
8A
Peak Off - State Voltage(Vdrm):
1kV
Current - Surge(Itsm@f):
80A@50Hz
SCR Type:
1 TRIAC
Gate Trigger Voltage (Vgt):
1.5V
Operating Temperature:
-40℃~+150℃
Mfr. Part #:
T835
Package:
TO-263
Product Description
Jiangsu Weida Semiconductor Co., Ltd. T8**H 8A High Junction Temperature Triacs
The T8**H series triacs from Jiangsu Weida Semiconductor Co., Ltd. are designed for high junction temperature applications, offering a high dv/dt rate and robust resistance to electromagnetic interference. These triacs excel in handling shock loading of large currents and are particularly recommended for inductive loads and high ambient temperature environments.
Product Attributes
- Brand: Jiangsu Weida Semiconductor Co., Ltd.
- Product Line: T8**H
- Type: High Junction Temperature Triacs
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Storage junction temperature range | Tstg | -40~150 | ||
| Operating junction temperature range | Tj | -40~150 | ||
| Repetitive peak off-state voltage | VDRM/VRRM | 800/1000 | V | Tj=25 |
| RMS on-state current | IT(RMS) | 8.0 | A | |
| Non repetitive surge peak on-state current | ITSM | 80 | A | Full cycle, F=50Hz |
| I2t value for fusing | I2t | 32 | A2s | tp=10ms |
| Critical rate of rise of on-state current | dI/dt | 50 | A/s | IG=2IGT |
| Peak gate current | IGM | 4 | A | |
| Average gate power dissipation | PG(AV) | 1 | W | |
| Peak gate power | PGM | 5 | W | |
| Gate Trigger Current (max) | IGT | 10, 20, 35, 50 | mA | VD=12V, RL=33, Quadrant -- |
| Gate Trigger Voltage (max) | VGT | 1.5 | V | |
| Gate Voltage Dark (min) | VGD | 0.2 | V | VD=VDRM, Quadrant -- |
| Holding Current (max) | IH | 20, 30, 45, 60 | mA | IT=100mA, Quadrant - |
| Latching Current (max) | IL | 25, 40, 50, 70 (-); 35, 55, 70, 90 () | mA | IG=1.2IGT |
| Critical rate of rise of off-state voltage | dV/dt | 200, 500, 1000, 1500 | V/s | VD=2/3VDRM, Tj=125, Gate open |
| On-state voltage (max) | VTM | 1.5 | V | ITM=11A, tp=380s, Tj=25 |
| Off-state current (max) | IDRM/IRRM | 5 (Tj=25); 1 (Tj=125) | A | VDRM= VRRM |
| Junction to case thermal resistance | Rth(j-c) | 2.0, 2.8, 2.9, 3.1, 3.0 | /W | AC; Varies by package type |
2410122027_WEIDA-T835_C2985026.pdf
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