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quality Surface Mount Rectifier Taiwan Semiconductor SFAS805GHMNG Low Forward Voltage And High Surge Current factory
quality Surface Mount Rectifier Taiwan Semiconductor SFAS805GHMNG Low Forward Voltage And High Surge Current factory

Surface Mount Rectifier Taiwan Semiconductor SFAS805GHMNG Low Forward Voltage And High Surge Current

Key Attributes
Model Number: SFAS805GHMNG
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
125A
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
300V
Voltage - Forward(Vf@If):
1.3V@8A
Reverse Leakage Current (Ir):
10uA@300V
Current - Rectified:
8A
Mfr. Part #:
SFAS805GHMNG
Package:
D2PAK
Product Description

Product Overview

The SFAS801G - SFAS808G series are surface mount super fast rectifiers from Taiwan Semiconductor. These glass-passivated junction chips are designed for automated placement and offer high efficiency with low forward voltage (VF). They feature high surge current capability, low power loss, and are halogen-free. The devices are ideal for various applications requiring fast switching and reliable performance.

Product Attributes

  • Brand: Taiwan Semiconductor
  • Material: Glass passivated junction chip
  • Color: Green compound (halogen-free)
  • Certifications: AEC-Q101 qualified (with suffix "H"), RoHS Directive 2011/65/EU, WEEE 2002/96/EC
  • Moisture Sensitivity Level: Level 1, per J-STD-020
  • Molding Compound: UL flammability classification rating 94V-0
  • Terminal: Matte tin plated leads, solderable per JESD22-B102
  • Whisker Test: Meet JESD 201 class 2

Technical Specifications

ParameterSymbolSFAS801GSFAS802GSFAS803GSFAS804GSFAS805GSFAS806GSFAS807GSFAS808GUnit
Maximum repetitive peak reverse voltageVRRM50100150200300400500600V
Maximum RMS voltageVRMS3570105140210280350420V
Maximum DC blocking voltageVDC50100150200300400500600V
Maximum average forward rectified currentIF(AV)8A
Peak forward surge current, 8.3 ms single half sine-waveIFSM125A
Maximum reverse recovery time (Note 1)trr35ns
Maximum instantaneous forward voltage IF= 8 AVF0.951.31.7-----V
Maximum reverse current @ rated VR TJ=25CIR10A
Maximum reverse current @ rated VR TJ=100CIR400A
Typical junction capacitance (Note 2)CJ400pF
Typical thermal resistanceRJC2.2C/W
Operating junction temperature rangeTJ - 55 to +150C
Storage temperature rangeTSTG - 55 to +150C

2304140030_Taiwan-Semiconductor-SFAS805GHMNG_C485062.pdf

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