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quality Silicon Carbide Diode Wolfspeed C6D20065G-TR 650 Volt 20 Amp for and Thermal Stability Applications factory
quality Silicon Carbide Diode Wolfspeed C6D20065G-TR 650 Volt 20 Amp for and Thermal Stability Applications factory
quality Silicon Carbide Diode Wolfspeed C6D20065G-TR 650 Volt 20 Amp for and Thermal Stability Applications factory
quality Silicon Carbide Diode Wolfspeed C6D20065G-TR 650 Volt 20 Amp for and Thermal Stability Applications factory

Silicon Carbide Diode Wolfspeed C6D20065G-TR 650 Volt 20 Amp for and Thermal Stability Applications

Key Attributes
Model Number: C6D20065G-TR
Product Custom Attributes
Mfr. Part #:
C6D20065G-TR
Package:
TO-263
Product Description

Product Overview

The C6D20065G is a 650 V, 20 A Silicon Carbide (SiC) Schottky Barrier Diode designed to enhance power electronics systems with higher efficiency, faster switching frequencies, and increased power density compared to traditional silicon-based solutions. Its SiC technology offers a low forward voltage drop with a positive temperature coefficient, zero reverse recovery current, and temperature-independent switching behavior. These diodes can be easily paralleled without concern for thermal runaway, contributing to lower overall system costs due to reduced cooling requirements and improved thermal performance. Ideal for demanding applications such as industrial power supplies, uninterruptible and auxiliary power supplies, switch mode power supplies, solar inverters, power factor correction, and server/telecom power supplies.

Product Attributes

  • Brand: Wolfspeed
  • Material: Silicon Carbide (SiC)
  • Product Line: 6th Generation
  • Certifications: REACh, RoHS, Halogen-Free
  • Trademarks: Wolfspeed, Wolfstreak logo (registered), Wolfspeed logo (trademark)

Technical Specifications

Parameter Symbol Value Unit Test Conditions Notes
Repetitive Peak Reverse Voltage VRRM 650 V DC Blocking Voltage
Continuous Forward Current IF 64 A TJ = 25 C Fig. 3
32 A TJ = 125 C
20 A TJ = 150 C
Repetitive Peak Forward Surge Current IFRM 78 A TC = 25 C, tp = 10 ms, Half Sine Wave
45 A TC = 110 C, tp = 10 ms, Half Sine Wave
Non-Repetitive Forward Surge Current IFSM 135 A TC = 25 C, tp = 10 ms, Half Sine Wave Fig. 8
111 A TC = 110 C, tp = 10 ms, Half Sine Wave
Non-Repetitive Peak Forward Surge Current IF,Max 1550 A TC = 25 C, tp = 10 s, Pulse
1290 A TC = 110 C, tp = 10 s, Pulse
Power Dissipation Ptot 163 W TJ = 25 C Fig. 4
71 W TJ = 110 C
i2t value i2dt 91 As TC= 25C, tp=10ms
62 As TC = 110C, tp=10ms
Forward Voltage VF 1.27 V IF = 20 A, Tj = 25 C Fig. 1
1.37 V IF = 20 A, Tj = 175 C
Reverse Current IR 5 A VR = 650 V, Tj = 25 C Fig. 2
40 A VR = 650 V, Tj = 175 C
Total Capacitive Charge QC 62 nC VR = 400 V, Tj = 25 C Fig. 5
Total Capacitance C 1153 pF VR = 0 V, Tj = 25 C, f = 1 MHz Fig. 6
120 pF VR = 200 V, Tj = 25 C, f = 1 MHz
96 pF VR = 400 V, Tj = 25 C, f = 1 MHz
Capacitance Stored Energy Ec 9.5 J VR = 400 V Fig. 7
Thermal Resistance, Junction to Case (Typical) R,JC (TYP) 0.76 C / W
Junction Temperature Tj -55 to +175 C
Case & Storage Temperature Tc -55 to +175 C
Package Type TO-263-2
Marking C6D20065G
Electrostatic Discharge (ESD) - Human Body Model HBM Class 3B ( 8000 V)
Electrostatic Discharge (ESD) - Charge Device Model CDM Class C3 ( 1000 V)

Product Ordering Information

Order Number Packing Type
C6D20065G Tube
C6D20065G-TR Tape and Reel

2410301854_Wolfspeed-C6D20065G-TR_C20588790.pdf

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