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quality TO252 Package Silicon Carbide Diode Wolfspeed E4D02120E-TR 1200 Volt 2 Amp Suitable for PV Inverters factory
quality TO252 Package Silicon Carbide Diode Wolfspeed E4D02120E-TR 1200 Volt 2 Amp Suitable for PV Inverters factory
quality TO252 Package Silicon Carbide Diode Wolfspeed E4D02120E-TR 1200 Volt 2 Amp Suitable for PV Inverters factory
quality TO252 Package Silicon Carbide Diode Wolfspeed E4D02120E-TR 1200 Volt 2 Amp Suitable for PV Inverters factory

TO252 Package Silicon Carbide Diode Wolfspeed E4D02120E-TR 1200 Volt 2 Amp Suitable for PV Inverters

Key Attributes
Model Number: E4D02120E-TR
Product Custom Attributes
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
1.8V@2A
Reverse Leakage Current (Ir):
50uA@1200V
Current - Rectified:
8A
Mfr. Part #:
E4D02120E-TR
Package:
TO-252-2
Product Description

Product Overview

The E4D02120E is a 4th Generation 1200 V, 2 A Silicon Carbide (SiC) Schottky Diode from Wolfspeed. It offers significant performance advantages over silicon-based solutions, including higher efficiency, faster switching frequencies, and increased power density. This SiC diode features a low forward voltage (VF) drop with a positive temperature coefficient, zero reverse recovery current, and temperature-independent switching behavior. It is designed for applications requiring high reliability and performance, such as bootstrap diodes, boost diodes in PFC, automotive power conversion, PV inverters, and outdoor power conversion. The diode's ability to be easily paralleled without thermal runaway concerns, combined with reduced cooling requirements, contributes to lower overall system costs.

Product Attributes

  • Brand: Wolfspeed
  • Material: Silicon Carbide (SiC) Schottky
  • Package Type: TO-252-2
  • Certifications: AEC-Q101 + HV-H3TRB Qualified, PPAP Capable
  • RoHS Compliance: Compliant

Technical Specifications

Parameter Symbol Value Unit Test Conditions Note
Repetitive Peak Reverse Voltage VRRM 1200 V
DC Blocking Voltage VDC 1200 V
Continuous Forward Current IF 8 A TJ = 25 C Fig. 3
Continuous Forward Current IF 4 A TJ = 135 C Fig. 3
Continuous Forward Current IF 2 A TJ = 160 C Fig. 3
Repetitive Peak Forward Surge Current IFRM 11 A Tc = 25 C, tp = 10 ms, Half Sine Wave
Repetitive Peak Forward Surge Current IFRM 7 A Tc = 110 C, tp = 10 ms, Half Sine Wave
Power Dissipation Ptot 50 W TC = 25 C Fig. 4
Power Dissipation Ptot 21 W TC = 110 C Fig. 4
Forward Voltage VF 1.4 (Typ.), 1.8 (Max.) V IF = 2 A, TJ = 25 C Fig. 1
Forward Voltage VF 1.9 V IF = 2 A, TJ = 175 C
Reverse Current IR 10 (Typ.), 50 (Max.) A VR = 1200 V, TJ = 25 C Fig. 2
Reverse Current IR 40 A VR = 1200 V, TJ = 175 C
Total Capacitive Charge QC 16 nC VR = 800 V, TJ = 25 C Fig. 5
Total Capacitance C 153 pF VR = 0 V, TJ = 25 C, f = 1 MHz Fig. 6
Total Capacitance C 17 pF VR = 400 V, TJ = 25 C, f = 1 MHz Fig. 6
Total Capacitance C 14 pF VR = 800 V, TJ = 25 C, f = 1 MHz Fig. 6
Capacitance Stored Energy EC 5.6 J VR = 800 V Fig. 7
Thermal Resistance, Junction to Case (Typ.) R, JC 2.99 C / W
Operating Junction & Storage Temperature TJ , Tstg -55 to +175 C Fig. 8
Maximum Processing Temperature TPROC 325 (10 min.) C
Maximum Moisture Sensitivity Level MSL 3
Human Body Model (ESD) HBM Class 3B ( 8000 V)
Charge Device Model (ESD) CDM Class C3 ( 1000 V)

Package Dimensions (TO-252-2):

  • A: 2.159 - 2.413 mm
  • A1: 0 - 0.13 mm
  • b: 0.64 - 0.89 mm
  • b2: 0.653 - 1.143 mm
  • b3: 5.004 - 5.6 mm
  • c: 0.457 - 0.61 mm
  • c2: 0.457 - 0.864 mm
  • D: 5.867 - 6.248 mm
  • D1: 5.21 mm
  • E: 6.35 - 7.341 mm
  • E1: 4.32 mm
  • e: 4.58 BSC
  • H: 9.65 - 10.414 mm
  • L: 1.106 - 1.78 mm
  • L2: 0.51 BSC
  • L3: 0.889 - 1.27 mm
  • L4: 0.64 - 1.01 mm
  • : 0 - 8

2411280056_Wolfspeed-E4D02120E-TR_C7454070.pdf

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