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quality Wolfspeed CAS175M12BM3 175 Amp Silicon Carbide Module with Industry Standard 62 Millimeter Footprint factory
quality Wolfspeed CAS175M12BM3 175 Amp Silicon Carbide Module with Industry Standard 62 Millimeter Footprint factory
quality Wolfspeed CAS175M12BM3 175 Amp Silicon Carbide Module with Industry Standard 62 Millimeter Footprint factory
quality Wolfspeed CAS175M12BM3 175 Amp Silicon Carbide Module with Industry Standard 62 Millimeter Footprint factory

Wolfspeed CAS175M12BM3 175 Amp Silicon Carbide Module with Industry Standard 62 Millimeter Footprint

Key Attributes
Model Number: CAS175M12BM3
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
234A
Operating Temperature -:
-40℃~+150℃
RDS(on):
10.4mΩ@15V
Gate Threshold Voltage (Vgs(th)):
3.6V@43mA
Reverse Transfer Capacitance (Crss@Vds):
26.4pF
Output Capacitance(Coss):
942nF
Input Capacitance(Ciss):
12.9nF
Pd - Power Dissipation:
789W
Gate Charge(Qg):
422nC
Mfr. Part #:
CAS175M12BM3
Product Description

Product Overview

The CAS175M12BM3 is a 1200 V, 175 A Silicon Carbide Half-Bridge Module designed for high-frequency operation with ultra-low losses. It features zero reverse recovery from diodes and zero turn-off tail current from MOSFETs, offering normally-off, fail-safe device operation. The module utilizes a copper baseplate and aluminum nitride insulator, and its industry-standard 62 mm footprint enables system retrofitting. Key applications include induction heating, motor drives, renewables, railway auxiliary & traction, EV fast charging, and UPS and SMPS systems. The 62 mm form factor enhances system efficiency by leveraging the low switching and conduction losses of Silicon Carbide technology.

Product Attributes

  • Brand: Wolfspeed
  • Model: CAS175M12BM3
  • Technology: Silicon Carbide (SiC)
  • Package Type: 62 mm Half-Bridge Module
  • Certifications: RoHS Compliant, REACh Compliant

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Conditions Note
Drain-Source Voltage VDS 1200 V
Gate-Source Voltage, Maximum Value VGS(max) -8 +19 V Transient Note 1 Fig. 33
Gate-Source Voltage, Recommended VGS(op) -4 +15 V Static DC Continuous
DC Continuous Drain Current ID 176 234 A VGS = 15 V, TC = 25 C, TVJ 175 C Notes 2, 3 Fig. 21
DC Continuous Drain Current ID 176 A VGS = 15 V, TC = 90 C, TVJ 175 C
DC Source-Drain Current (Schottky Diode) ISD(SD) 236 A VGS = -4 V, TC = 25 C, TVJ 175 C
Pulsed Drain-Source Current IDM 350 A tPmax limited by TVJmax, VGS = 15 V, TC = 25 C
Power Dissipation PD 789 W TC = 25 C, TVJ 175 C Note 4 Fig. 21
Virtual Junction Temperature TVJ(op) -40 150 C Operation
Virtual Junction Temperature TVJ(op) 175 C Intermittent with Reduced Life
Drain-Source Breakdown Voltage V(BR)DSS 1200 V VGS = 0 V, TVJ = -40 C
Gate Threshold Voltage VGS(th) 1.8 2.5 3.6 V VDS = VGS, ID = 43 mA
Zero Gate Voltage Drain Current IDSS 4.1 564 A VGS = 0 V, VDS = 1200 V
Gate-Source Leakage Current IGSS 20 200 nA VGS = 15 V, VDS = 0 V
Drain-Source On-State Resistance RDS(on) 8.0 10.4 m VGS = 15 V, ID = 175 A Fig. 2 Fig. 3
Drain-Source On-State Resistance RDS(on) 12.9 m VGS = 15 V, ID = 175 A, TVJ = 150 C
Drain-Source On-State Resistance RDS(on) 14.4 m VGS = 15 V, ID = 175 A, TVJ = 175 C
Transconductance gfs 156 S VDS = 20 V, ID = 175 A Fig. 4
Turn-On Switching Energy EON 2.4 2.7 mJ TVJ = 25 C, VDD = 600 V, ID = 175 A, VGS = -4 V/15 V, RG(OFF) = 0.0 , RG(ON) = 0.0 , L = 42 H Fig. 11 Fig. 13
Turn-Off Switching Energy EOFF 1.9 2.0 mJ TVJ = 25 C, VDD = 600 V, ID = 175 A, VGS = -4 V/15 V, RG(OFF) = 0.0 , RG(ON) = 0.0 , L = 42 H Fig. 11 Fig. 13
Internal Gate Resistance RG(int) 5.05 f = 100 kHz
Input Capacitance Ciss 12.9 nF VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz Fig. 9
Output Capacitance Coss 942 pF VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz Fig. 9
Reverse Transfer Capacitance Crss 26.4 pF VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz Fig. 9
Gate to Source Charge QGS 134 nC VDS = 800 V, VGS = -4 V/15 V, ID = 175 A, Per IEC60747-8-4 pg 21
Gate to Drain Charge QGD 122 nC VDS = 800 V, VGS = -4 V/15 V, ID = 175 A, Per IEC60747-8-4 pg 21
Total Gate Charge QG 422 nC VDS = 800 V, VGS = -4 V/15 V, ID = 175 A, Per IEC60747-8-4 pg 21
FET Thermal Resistance, Junction to Case Rth JC 0.190 C/W Fig. 17
Diode Thermal Resistance, JCT. to Case Rth JC 0.216 C/W Fig. 18
Package Resistance, M1 (High-Side) R3-1 2.30 3.22 m TC = 25 C, ISD = 175 A, Note 6
Package Resistance, M2 (Low-Side) R1-2 2.12 2.97 m TC = 25 C, ISD = 175 A, Note 6
Stray Inductance LStray 11.1 nH Between DC- and DC+, f = 10 MHz
Case Temperature TC -40 125 C
Mounting Torque MS 4 5 5.5 N-m Baseplate, M6-1.0 Bolts
Mounting Torque MS 4 5 5.5 N-m Power Terminals, M6-1.0 Bolts
Weight W 300 g
Case Isolation Voltage Visol 5 kV AC, 50 Hz, 1 Minute
Clearance Distance, Terminal to Terminal 9 mm
Clearance Distance, Terminal to Baseplate 30 mm
Creepage Distance, Terminal to Terminal 30 mm
Creepage Distance, Terminal to Baseplate 40 mm

2410301853_Wolfspeed-CAS175M12BM3_C20544593.pdf

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