High collector current PNP transistor Suzhou Good-Ark Elec GSBCP51-16 suitable for AF driver output stages

Key Attributes
Model Number: GSBCP51-16
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Transition Frequency(fT):
100MHz
Number:
1 PNP
Type:
PNP
Vce Saturation(VCE(sat)):
500mV@500mA,50mA
Pd - Power Dissipation:
1.5W
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
GSBCP51-16
Package:
SOT-223
Product Description

Product Overview

The GSBCP51-52-53 are PNP transistors designed for AF driver and output stages. They offer high collector current, low collector-emitter saturation voltage, and complementary types (GSBCP54/GSBCP55/GSBCP56 NPN) are available.

Product Attributes

  • Brand: GSBCP (Implied from product name)
  • Package Type: SOT-223

Technical Specifications

ParameterSymbolGSBCP51GSBCP52GSBCP53UnitTest Conditions
Collector-Base VoltageVCBO-45-60-100V
Collector-Emitter VoltageVCEO-45-60-80V
Emitter-Base VoltageVEBO-5V
Collector Current - ContinuousIC1.5A
Collector Power DissipationPC94mW
Thermal Resistance Junction to AmbientRJA1.5/W
Storage Temperature RangeTSTG-65 to +150
Collector-Emitter Breakdown VoltageV(BR)CEO-45-60-100VIC= -10mA,IB=0
Collector-Base Breakdown VoltageV(BR)CBO-45-60-80VIC=- 0.1mA,IE=0
Collector Cut-Off CurrentICBO-100nAVCB= -30 V, IE=0
Base-Emitter Breakdown VoltageV(BR)EBO-5VIE= -10A,IC=0
DC Current GainhFE(1)25VCE=-2V, IC=-5mA
DC Current GainhFE(2)63-250VCE= -2V, IC=-150mA
DC Current GainhFE(3)25VCE= -2V, IC=-500mA
Collector-Emitter Saturation VoltageVCE(sat)-0.5VIC=-500mA,IB=-50mA
Base-Emitter VoltageVBE-1VVCE=-2V, IC=-500mA
Transition FrequencyfT100MHzVCE=-10V,IC=-50mA, f=100MHz

2411201841_Suzhou-Good-Ark-Elec-GSBCP51-16_C19841090.pdf

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