switching N channel MOSFET XNRUSEMI XR15N10S with high cell density and low gate charge performance
Key Attributes
Model Number:
XR15N10S
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
RDS(on):
80mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
33pF
Number:
1 N-channel
Pd - Power Dissipation:
30W
Input Capacitance(Ciss):
765pF
Output Capacitance(Coss):
38pF
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
XR15N10S
Package:
SOP-8
Product Description
Product Overview
The XR15N10S is a high-performance N-channel MOSFET featuring extreme high cell density, offering excellent RDS(on) and gate charge for synchronous buck converter applications. It boasts super low gate charge, an advanced high cell density Trench technology, and excellent Cdv/dt effect decline. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Green Device Available
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units | |
| Absolute Maximum Ratings | VDS | Drain-Source Voltage | - | - | 100 | V | |
| VGS | Gate-Source Voltage | - | - | ±20 | V | ||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | - | - | 15 | A | ||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | - | - | 8 | A | ||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V | - | - | 3 | A | ||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V | - | - | 2.4 | A | ||
| IDM | Pulsed Drain Current | - | - | 20 | A | ||
| Thermal Data | RJA | Thermal Resistance Junction-ambient | - | - | 62 | ℃/W | |
| RJC | Thermal Resistance Junction-Case | - | - | 6.6 | ℃/W | ||
| PD@TC=25 | Total Power Dissipation | - | - | 30 | W | ||
| Electrical Characteristics | V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250μA | 100 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=100V, VGS=0V | - | - | 1.0 | μA | |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS=±20V | - | - | ±100 | nA | |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250μA | 1.0 | 1.5 | 2.5 | V | |
| RDS(on) | Static Drain-Source on-Resistance | VGS=10V, ID=5A | - | 80 | 105 | m℆ | |
| RDS(on) | Static Drain-Source on-Resistance | VGS=4.5V, ID=3A | - | 96 | 140 | m℆ | |
| Dynamic Characteristics | Ciss | Input Capacitance | VDS=25V, VGS=0V, f=1.0MHz | - | 765 | - | pF |
| Coss | Output Capacitance | - | - | 38 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | - | 33 | - | pF | |
| Switching Characteristics | td(on) | Turn-on Delay Time | VDS=50V, ID=3A, RG=1.8℆, VGS=10V | - | 7.5 | - | ns |
| tr | Turn-on Rise Time | - | - | 6 | - | ns | |
| td(off) | Turn-off Delay Time | - | - | 21 | - | ns | |
| tf | Turn-off Fall Time | - | - | 9 | - | ns | |
| Drain-Source Diode Characteristics | IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 10 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 40 | A | ||
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=10A | - | - | 1.2 | V | |
| Body Diode Characteristics | trr | Body Diode Reverse Recovery Time | IF=3A, dI/dt=100A/μs | - | 21 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | - | - | 22 | - | nC |
2507241530_XNRUSEMI-XR15N10S_C49363217.pdf
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