Suzhou Good Ark Elec SSFP4806 40V N Channel MOSFET Low On Resistance And High Current Capability
Key Attributes
Model Number:
SSFP4806
Product Custom Attributes
Current - Continuous Drain(Id):
30A
RDS(on):
12mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
110pF
Output Capacitance(Coss):
250pF
Pd - Power Dissipation:
46W
Input Capacitance(Ciss):
-
Gate Charge(Qg):
24nC@4.5V
Mfr. Part #:
SSFP4806
Product Description
Product Overview
The SSFP4806 is a 40V N-Channel MOSFET utilizing advanced MOSFET process technology to achieve high cell density and low on-resistance. This design makes the device highly efficient and reliable, ideal for high-efficiency switched-mode power supplies and a wide range of other applications requiring fast switching and reverse body recovery. Key benefits include low on-resistance with low gate charge, contributing to overall system efficiency.
Product Attributes
- Brand: goodarksemi
- Model: SSFP4806
- Channel Type: N-Channel
- Package Type: PPAK5x6
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous (TC=25C) | ID | 30 | A | |||
| Drain Current-Continuous (TC=100C) | ID | 19 | A | |||
| Drain Current-Pulsed | IDM | 120 | A | |||
| Single Pulse Avalanche Energy | EAS | 64 | mJ | |||
| Single Pulse Avalanche Current | IAS | 36 | A | |||
| Power Dissipation (TC=25C) | PD | 46 | W | |||
| Power Dissipation-Derate above 25C | 0.37 | W/C | ||||
| Thermal Resistance, Junction-to-Ambient | RJA | 62 | C/W | |||
| Thermal Resistance, Junction-to-Case | RJC | 2.7 | C/W | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | +150 | C | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=40V, VGS=0V, TJ=25C | - | - | 1 | A |
| Drain-Source Leakage Current | IDSS | VDS=32V, VGS=0V, TJ=125C | - | - | 10 | A |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=8A | - | 7.2 | 9 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=4A | - | 9.5 | 12 | m |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250A | 1 | 1.6 | 2.5 | V |
| Forward Transconductance | gfs | VDS=10V, ID=10A | - | 13 | - | S |
| Total Gate Charge | Qg | - | 12.2 | 24 | nC | |
| Gate-Source Charge | Qgs | - | 3.3 | 7 | nC | |
| Gate-Drain Charge | Qgd | - | 6.7 | 13 | nC | |
| Turn-On Delay Time | td(on) | - | 13.2 | 25 | nS | |
| Rise Time | tr | - | 2.2 | 5 | nS | |
| Turn-Off Delay Time | td(off) | - | 72 | 130 | nS | |
| Fall Time | tf | - | 4.5 | 10 | nS | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, F=1MHz | - | 1220 | 2200 | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, F=1MHz | - | 130 | 250 | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, F=1MHz | - | 55 | 110 | pF |
| Gate Resistance | Rg | VGS=0V, VDS=0V, F=1MHz | - | 2.2 | - | |
| Continuous Source Current | IS | - | - | 30 | A | |
| Pulsed Source Current | ISM | - | - | 60 | A | |
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25C | - | - | 1 | V |
| Dimensions (PPAK5x6) | Symbol | Min (mm) | Max (mm) | Min (in) | Max (in) |
|---|---|---|---|---|---|
| A | 0.800 | 1.200 | 0.031 | 0.047 | |
| b | 0.300 | 0.510 | 0.012 | 0.020 | |
| C | 0.250 | Ref | 0.010 | Ref | |
| D | 4.800 | 5.400 | 0.189 | 0.213 | |
| E | 5.450 | 5.960 | 0.215 | 0.235 | |
| E1 | 3.200 | 3.800 | 0.126 | 0.150 | |
| e | 1.27 BSC | 0.050 BSC | |||
| F | 1.000 | 1.900 | 0.039 | 0.075 | |
| G | 0.380 | 0.800 | 0.015 | 0.031 | |
| H | 5.850 | 6.300 | 0.230 | 0.248 | |
| L1 | 0.050 | 0.250 | 0.002 | 0.010 | |
| K | 1.500 | 1.900 | 0.059 | 0.074 |
2411201841_Suzhou-Good-Ark-Elec-SSFP4806_C19841903.pdf
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