Suzhou Good Ark Elec SSFL6912 N Channel MOSFET with Excellent Thermal Resistance and Low Gate Charge
Key Attributes
Model Number:
SSFL6912
Product Custom Attributes
Current - Continuous Drain(Id):
5A
RDS(on):
75mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
30pF
Input Capacitance(Ciss):
540pF
Output Capacitance(Coss):
45pF
Pd - Power Dissipation:
1.79W
Gate Charge(Qg):
8nC@10V
Mfr. Part #:
SSFL6912
Package:
SOT-223
Product Description
Product Overview
The SSFL6912 is a 60V N-Channel MOSFET designed with advanced MOSFET process technology to achieve high cell density and low on-resistance. This device offers fast switching and reverse body recovery, making it ideal for high efficiency switched mode power supplies and a wide variety of other applications. Its low on-resistance combined with low gate charge ensures high efficiency and reliability.
Product Attributes
- Brand: Goodarksemi
- Model: SSFL6912
- Package: SOT-223
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous (TA=25C) | ID | 5 | A | |||
| Drain Current-Continuous (TA=70C) | ID | 4 | A | |||
| Power Dissipation (TA=25C) | PD | 1.79 | W | |||
| Power Dissipation-Derate above 25C | 0.014 | W/C | ||||
| Thermal Resistance, Junction-to-Ambient | RJA | 70 | C/W | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | +150 | C | ||
| Single Pulse Avalanche Energy | EAS | 8 | mJ | |||
| Single Pulse Avalanche Current | IAS | 12.8 | A | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | - | - | V |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.2 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=5A | - | 60 | 75 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=3A | - | 70 | 90 | m |
| Drain-Source Leakage Current | IDSS | VDS=60V, VGS=0V, TJ=25C | - | - | 1 | A |
| Drain-Source Leakage Current | IDSS | VDS=48V, VGS=0V, TJ=125C | - | - | 10 | A |
| Total Gate Charge | Qg | VDS=30V, ID=3A, VGS=10V | - | 4.6 | 8 | nC |
| Continuous Source Current | IS | - | - | 5 | A | |
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25C | - | - | 1 | V |
| Reverse Recovery Time | trr | VR=50V, IS=3A, di/dt=100A/s, TJ=25C | - | 25 | - | nS |
| Reverse Recovery Charge | Qrr | - | 15 | - | nC |
2411201841_Suzhou-Good-Ark-Elec-SSFL6912_C19841895.pdf
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