Silicon N Channel IGBT TOSHIBA GT40WR21Q Featuring Integrated Freewheeling Diode and RoHS Compliance
Key Attributes
Model Number:
GT40WR21,Q
Product Custom Attributes
Pd - Power Dissipation:
375W
Td(off):
-
Operating Temperature:
-
Td(on):
-
Collector-Emitter Breakdown Voltage (Vces):
1.35kV
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.9V@15V,40A
Switching Energy(Eoff):
-
Turn-On Energy (Eon):
-
Mfr. Part #:
GT40WR21,Q
Package:
SC-65-3
Product Description
Product Overview
The GT40WR21 is a silicon N-Channel IGBT designed for voltage-resonant inverter switching applications. It features 6.5th generation technology, a monolithic RC-IGBT with an integrated freewheeling diode, high-speed switching capabilities, low saturation voltage, and a high junction temperature rating. This product is dedicated to specific inverter applications and should not be used for other purposes.
Product Attributes
- Brand: Toshiba
- Product Type: Discrete IGBTs
- Material: Silicon
- Mode: Enhancement mode
- Generation: 6.5th generation
- Certifications: RoHS COMPATIBLE
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition |
| Absolute Maximum Ratings | ||||
| Collector-emitter voltage | VCES | 1800 | V | (Ta = 25, unless otherwise specified) |
| Gate-emitter voltage | VGES | 25 | V | (Ta = 25, unless otherwise specified) |
| Collector current (DC) | IC | 40 | A | (Tc = 25) |
| Collector current (1 ms) | ICP | 80 | A | (Tc = 25) |
| Diode forward current (DC) | IF | 20 | A | (Tc = 25) |
| Diode forward current (100 s) | IFP | 80 | A | (Tc = 25) |
| Collector power dissipation | PC | 375 | W | (Tc = 25) |
| Junction temperature | Tj | 175 | (max) | |
| Storage temperature | Tstg | -55 to 175 | ||
| Mounting torque | TOR | 0.8 | Nm | (Note 1) |
| Thermal Characteristics | ||||
| Junction-to-case thermal resistance | Rth(j-c) | 0.40 | /W | Max |
| Static Characteristics | ||||
| Gate leakage current | IGES | 100 | nA | VGE = 25 V, VCE = 0 V |
| Collector cut-off current | ICES | 1 | mA | VCE = 1800 V, VGE = 0 V |
| Gate-emitter cut-off voltage | VGE(OFF) | 4.5 to 7.5 | V | IC = 40 mA, VCE = 5 V |
| Collector-emitter saturation voltage | VCE(sat) | 2.9 | V | IC = 40 A, VGE = 15 V (typ.) |
| Diode forward voltage | VF | 1.7 to 2.7 | V | IF = 15 A, VGE = 0 V |
| Dynamic Characteristics | ||||
| Input capacitance | Cies | 4500 | pF | VCE = 10 V, VGE = 0 V, f = 1 MHz (typ.) |
| Switching time (rise time) | tr | 0.40 | s | Resistive load VCC = 600 V, IC = 40 A, VGG = 15 V, RG = 51 (typ.) |
| Switching time (turn-on time) | ton | 0.55 | s | Resistive load VCC = 600 V, IC = 40 A, VGG = 15 V, RG = 51 (typ.) |
| Switching time (fall time) | tf | 0.15 | s | Resistive load VCC = 600 V, IC = 40 A, VGG = 15 V, RG = 51 (typ.) |
| Switching time (turn-off time) | toff | 0.42 | s | Resistive load VCC = 600 V, IC = 40 A, VGG = 15 V, RG = 51 (typ.) |
| Reverse recovery time | trr | 1.0 | s | IF = 15 A, VGE = 0 V, di/dt = -20 A/s (typ.) |
2504101957_TOSHIBA-GT40WR21-Q_C17673904.pdf
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