General purpose transistor XZT MMBT2907A PNP type with high current gain and low saturation voltage
Key Attributes
Model Number:
MMBT2907A
Product Custom Attributes
Current - Collector Cutoff:
20nA
Emitter-Base Voltage(Vebo):
5V
DC Current Gain:
100@150mA,10V
Transition Frequency(fT):
200MHz
Vce Saturation(VCE(sat)):
1.6V@500mA,50mA
Type:
PNP
Pd - Power Dissipation:
250mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT2907A
Package:
SOT-23
Product Description
Product Overview
The MMBT2907A is a PNP epitaxial planar construction transistor designed for general-purpose applications. It features a complementary NPN type, the MMBT2222A, and is available in a SOT-23 package. Key electrical characteristics include high DC current gain (hFE) and low saturation voltages.
Product Attributes
- Brand: X T ELECTRONICS
- Complementary NPN Type: MMBT2222A
- Package: SOT-23
- Marking: 2F
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| VCBO | Collector-Base Voltage | -60 | V | |||
| VCEO | Collector-Emitter Voltage | -60 | V | |||
| VEBO | Emitter-Base Voltage | -5 | V | |||
| IC | Collector Current -Continuous | -600 | mA | |||
| PD | Total Device Dissipation | (Ta=25) | 250 | mW | ||
| RJA | Thermal Resistance Junction to Ambient | 500 | /W | |||
| TJ,Tstg | Operation Junction and Storage Temperature Range | -55 | 150 | |||
| V(BR)CBO | Collector-base breakdown voltage | IC =-10A,IE=0 | -60 | V | ||
| V(BR)CEO* | Collector-emitter breakdown voltage | IC =-10mA,IB=0 | -60 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | EI =-10A,IC=0 | -5 | V | ||
| ICBO | Collector cut-off current | CB V =-50V,IE=0 | -20 | nA | ||
| IEBO | Base cut-off current | VEB=-3V, IC =0 | -10 | nA | ||
| ICEX | Collector cut-off current | CE V =-30 V, VBE(off) =-0.5V | -50 | nA | ||
| hFE(1) | DC current gain | CE V =-10V,IC=-150mA | 100 | 300 | ||
| hFE(2) | DC current gain | CE V =-10V,IC=-0.1mA | 75 | |||
| hFE(3) | DC current gain | CE V =-10V,IC=-1mA | 100 | |||
| hFE(4) | DC current gain | CE V =-10V,IC=-10mA | 100 | |||
| hFE(5) | DC current gain | CE V =-10V,IC=-500mA | 50 | |||
| VCE(sat)* | Collector-emitter saturation voltage | CI =-150mA,IB=-15mA | -0.4 | V | ||
| VCE(sat)* | Collector-emitter saturation voltage | CI =-500mA,IB=-50mA | -1.6 | V | ||
| VBE(sat)* | Base-emitter saturation voltage | CI =-150mA,IB=-15mA | -1.3 | V | ||
| VBE(sat)* | Base-emitter saturation voltage | CI =-500mA,IB=-50mA | -2.6 | V | ||
| fT | Transition frequency | CE V =-20V,IC=-50mA,f=100MHz | 200 | MHz | ||
| td | Delay time | VCE=-30V,IC=-150mA,B1=-15mA | 10 | ns | ||
| tr | Rise time | VCE=-30V,IC=-150mA,B1=-15mA | 25 | ns | ||
| tS | Storage time | VCE=-30V,IC=-150mA,B1=-15mA | 225 | ns | ||
| tf | Fall time | VCE=-6V,IC=- 150mA, IB1=- IB2=- 15mA | 60 | ns |
2410121612_XZT-MMBT2907A_C5805818.pdf
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