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quality High Voltage P Channel MOSFET VBsemi Elec VB2658 Offering 2.5 kVRMS Isolation and Low Thermal Resistance factory
quality High Voltage P Channel MOSFET VBsemi Elec VB2658 Offering 2.5 kVRMS Isolation and Low Thermal Resistance factory

High Voltage P Channel MOSFET VBsemi Elec VB2658 Offering 2.5 kVRMS Isolation and Low Thermal Resistance

Key Attributes
Model Number: VB2658
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3.8A
Operating Temperature -:
-55℃~+175℃
RDS(on):
50mΩ@10V,3.2A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
31pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
270pF@25V
Pd - Power Dissipation:
27W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
VB2658
Package:
SOT-23(TO-236)
Product Description

Product Overview

The VB2658 is a P-Channel 60-V (D-S) MOSFET designed for high-voltage applications. It features an isolated package with 2.5 kVRMS high voltage isolation, a sink to lead creepage distance of 4.8 mm, and a high operating temperature of 175 C. This MOSFET offers a dynamic dV/dt rating, low thermal resistance, and is available in a lead (Pb)-free option. It is suitable for various applications requiring robust high-voltage switching capabilities.

Product Attributes

  • Brand: VBsemi
  • Origin: Taiwan
  • Certifications: RoHS Compliant

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Drain-Source Breakdown VoltageVDSVGS = 0 V, ID = - 250 A- 60--V
VDS Temperature CoefficientVDS/TJReference to 25 C, ID = - 1 mA-- 0.060-V/C
Gate-Source Threshold VoltageVGS(th)VDS = VGS, ID = - 250 A- 1.0-- 2.5V
Gate-Source LeakageIGSSVGS = 20 V-- 100nA
Zero Gate Voltage Drain CurrentIDSSVDS = - 60 V, VGS = 0 V--100A
Zero Gate Voltage Drain CurrentIDSSVDS = - 48 VGS = 0 V, TJ = 150 C--500A
Drain-Source On-State ResistanceRDS(on)VGS = - 10 V, ID = - 3.2 A-- 0.05-
Forward TransconductancegfsVDS = - 25 V, ID = - 3.2 A1.6--S
Input CapacitanceCissVGS = 0 V, VDS = - 25 V, f = 1.0 MHz-270-pF
Output CapacitanceCossVGS = 0 V, VDS = - 25 V, f = 1.0 MHz-170-pF
Reverse Transfer CapacitanceCrssVGS = 0 V, VDS = - 25 V, f = 1.0 MHz-31-pF
Total Gate ChargeQgVGS = - 10 V, ID = - 4.7 A, VDS = - 48 V--12nC
Gate-Source ChargeQgsVGS = - 10 V, ID = - 4.7 A, VDS = - 48 V--3.8nC
Gate-Drain ChargeQg dVGS = - 10 V, ID = - 4.7 A, VDS = - 48 V--5.1nC
Turn-On Delay Timetd(on)VDD = - 30 V, ID = - 4.7 A, RG = 24 , RD= 4.0 -11-ns
Rise TimetrVDD = - 30 V, ID = - 4.7 A, RG = 24 , RD= 4.0 -63-ns
Turn-Off Delay Timetd(off)VDD = - 30 V, ID = - 4.7 A, RG = 24 , RD= 4.0 -9.6-ns
Fall TimetfVDD = - 30 V, ID = - 4.7 A, RG = 24 , RD= 4.0 -31-ns
Internal Drain InductanceLDBetween lead, 6 mm from package and center of die contact-4.5-nH
Internal Source InductanceLSBetween lead, 6 mm from package and center of die contact-7.5-nH
Continuous Source-Drain Diode CurrentISMOSFET symbol showing the integral reverse p-n junction diode--5.2A
Pulsed Diode Forward CurrentISMMOSFET symbol showing the integral reverse p-n junction diode--21A
Body Diode VoltageVSDTJ = 25 C, IS = - 5.2 A, VGS = 0 V--5.5V
Body Diode Reverse Recovery TimetrrTJ = 25 C, IF = - 4.7 A, dI/dt = 100 A/s-80160ns
Body Diode Reverse Recovery ChargeQrrTJ = 25 C, IF = - 4.7 A, dI/dt = 100 A/s-0.0960.19C

2409300832_VBsemi-Elec-VB2658_C480921.pdf

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