Medium Current Zener Diode XZT BZT52C3V9S Lead Free Planar Die Construction Component
Key Attributes
Model Number:
BZT52C3V9S
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Reverse Leakage Current (Ir):
3uA@1.0V
Pd - Power Dissipation:
200mW
Impedance(Zzt):
90Ω
Diode Configuration:
1 Independent
Zener Voltage(Range):
3.7V~4.1V
Zener Voltage(Nom):
3.9V
Impedance(Zzk):
600Ω
Mfr. Part #:
BZT52C3V9S
Package:
SOD-323
Product Description
Product Overview
The BZT52C2V4S thru BZT52C43S series is a range of Zener Diodes featuring planar die construction. These diodes are designed for general purpose and medium current applications, making them ideally suited for automated assembly processes. They are available in a lead-free version.
Product Attributes
- Brand: XT ELECTRONICS
- Website: http://www.xt-elec.com
- Available in Lead Free Version
Technical Specifications
| Type | Marking | Zener Voltage Range (Note 2) Nom(V) | Zener Voltage Range (Note 2) Min(V) | Zener Voltage Range (Note 2) Max(V) | Test Current IZT (mA) | Maximum Zener Impedance ZZT@IZT () | Maximum Reverse Current IR (A) | Typical Temperature Coefficient @IZTC (mV/) |
| BZT52C2V4S | WX | 2.4 | 2.20 | 2.60 | 5 | 100 | 50 | -3.5 |
| BZT52C2V7S | W1 | 2.7 | 2.5 | 2.9 | 5 | 100 | 20 | -3.5 |
| BZT52C3V0S | W2 | 3.0 | 2.8 | 3.2 | 5 | 95 | 10 | -3.5 |
| BZT52C3V3S | W3 | 3.3 | 3.1 | 3.5 | 5 | 95 | 5 | -3.5 |
| BZT52C3V6S | W4 | 3.6 | 3.4 | 3.8 | 5 | 90 | 5 | -3.5 |
| BZT52C3V9S | W5 | 3.9 | 3.7 | 4.1 | 5 | 90 | 3 | -3.5 |
| BZT52C4V3S | W6 | 4.3 | 4.0 | 4.6 | 5 | 90 | 3 | -3.5 |
| BZT52C4V7S | W7 | 4.7 | 4.4 | 5.0 | 5 | 80 | 3 | -3.5 |
| BZT52C5V1S | W8 | 5.1 | 4.8 | 5.4 | 5 | 60 | 2 | -2.7 |
| BZT52C5V6S | W9 | 5.6 | 5.2 | 6.0 | 5 | 40 | 1 | -2 |
| BZT52C6V2S | WA | 6.2 | 5.8 | 6.6 | 5 | 10 | 3 | 0.4 |
| BZT52C6V8S | WB | 6.8 | 6.4 | 7.2 | 5 | 15 | 2 | 1.2 |
| BZT52C7V5S | WC | 7.5 | 7.0 | 7.9 | 5 | 15 | 1 | 2.5 |
| BZT52C8V2S | WD | 8.2 | 7.7 | 8.7 | 5 | 15 | 0.7 | 3.2 |
| BZT52C9V1S | WE | 9.1 | 8.5 | 9.6 | 5 | 15 | 0.5 | 3.8 |
| BZT52C10S | WF | 10 | 9.4 | 10.6 | 5 | 20 | 0.2 | 4.5 |
| BZT52C11S | WG | 11 | 10.4 | 11.6 | 5 | 20 | 0.1 | 5.4 |
| BZT52C12S | WH | 12 | 11.4 | 12.7 | 5 | 25 | 0.1 | 6.0 |
| BZT52C13S | WI | 13 | 12.4 | 14.1 | 5 | 30 | 0.1 | 7.0 |
| BZT52C15S | WJ | 15 | 13.8 | 15.6 | 5 | 30 | 0.1 | 9.2 |
| BZT52C16S | WK | 16 | 15.3 | 17.1 | 5 | 40 | 0.1 | 10.4 |
| BZT52C18S | WL | 18 | 16.8 | 19.1 | 5 | 45 | 0.1 | 12.4 |
| BZT52C20S | WM | 20 | 18.8 | 21.2 | 5 | 55 | 0.1 | 14.4 |
| BZT52C22S | WN | 22 | 20.8 | 23.3 | 5 | 55 | 0.1 | 16.4 |
| BZT52C24S | WO | 24 | 22.8 | 25.6 | 5 | 70 | 0.1 | 18.4 |
| BZT52C27S | WP | 27 | 25.1 | 28.9 | 2 | 80 | 0.1 | 21.4 |
| BZT52C30S | WQ | 30 | 28.0 | 32.0 | 2 | 80 | 0.1 | 24.4 |
| BZT52C33S | WR | 33 | 31.0 | 35.0 | 2 | 80 | 0.1 | 27.4 |
| BZT52C36S | WS | 36 | 34.0 | 38.0 | 2 | 90 | 0.1 | 30.4 |
| BZT52C39S | WT | 39 | 37.0 | 41.0 | 2 | 130 | 0.1 | 33.4 |
| BZT52C43S | WU | 43 | 40.0 | 46.0 | 2 | 100 | 0.1 | 10 |
| Characteristic | Symbol | Value | Unit |
| Forward Voltage (Note 2) @ IF = 10mA | VF | 0.9 | V |
| Power Dissipation (Note 1) | Pd | 200 | mW |
| Thermal Resistance from Junction to Ambient | RJA | /W | |
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 ~ +150 |
2411271958_XZT-BZT52C3V9S_C5805769.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
