N Channel 100V Trench Power MOSFET VBsemi Elec IRL540NSPBF-VB with D2PAK TO 263 package and RoHS compliance
Key Attributes
Model Number:
IRL540NSPBF-VB
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
45A
Operating Temperature -:
-55℃~+175℃
RDS(on):
30mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
150pF
Number:
1 N-channel
Output Capacitance(Coss):
410pF
Input Capacitance(Ciss):
3.1nF
Pd - Power Dissipation:
127W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
IRL540NSPBF-VB
Package:
TO-263(D2PAK)
Product Description
Product Overview
The IRL540NSPBF-VB is a high-performance N-Channel 100-V (D-S) Trench Power MOSFET designed for demanding applications. It features a low thermal resistance package and a maximum operating junction temperature of 175 C, ensuring reliability under high stress conditions. This MOSFET is suitable for various power switching applications.
Product Attributes
- Brand: VBsemi
- Certifications: RoHS Compliant
- Package Type: D2PAK (TO-263)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Static | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0 V, ID = 250 A | 100 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 A | 1 | 3 | V | |
| Gate-Body Leakage | IGSS | VGS = 20 V, VDS = 0 V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 80 V, VGS = 0 V | 1 | A | ||
| VDS = 80 V, VGS = 0 V, TJ = 125 C | 50 | A | ||||
| VDS = 80 V, VGS = 0 V, TJ = 175 C | 250 | A | ||||
| On-State Drain Current | ID(on) | VDS 5 V, VGS = 10 V | 75 | A | ||
| Drain-Source On-State Resistance | rDS(on) | VGS = 10 V, ID = 5 A | 0.030 | |||
| VGS = 4.5 V, ID = 3 A | 0.040 | |||||
| VGS = 10 V, ID = 5 A, TJ = 125 C | 0.050 | |||||
| VGS = 10 V, ID = 3 A, TJ = 175 C | 0.062 | |||||
| Forward Transconductance | gfs | VDS = 15 V, ID = 15 A | 10 | S | ||
| Dynamic | ||||||
| Input Capacitance | Ciss | VGS = 0 V, VDS = 25 V, f = 1 MHz | 3100 | pF | ||
| Output Capacitance | Coss | 410 | pF | |||
| Reverse Transfer Capacitance | Crss | 150 | pF | |||
| Total Gate Charge | Qg | VDS = 50 V, VGS = 10 V, ID = 40 A | 35 | 60 | nC | |
| Gate-Source Charge | Qgs | 11 | nC | |||
| Gate-Drain Charge | Qgd | 9 | nC | |||
| Gate Resistance | RG | 1.7 | ||||
| Turn-On Delay Time | td(on) | VDD = 50 V, RL = 1.25 , ID 40 A, VGEN = 10 V, RG = 2.5 | 11 | 20 | ns | |
| Rise Time | tr | 12 | 20 | ns | ||
| Turn-Off Delay Time | td(off) | 30 | 45 | ns | ||
| Fall Time | tf | 12 | 20 | ns | ||
| Source-Drain Diode Ratings and Characteristics | ||||||
| Continuous Current | IS | TC = 25 C | 40 | A | ||
| Pulsed Current | ISM | 120 | A | |||
| Forward Voltage | VSD | IF = 30 A, VGS = 0 V | 1.0 | 1.5 | V | |
| Reverse Recovery Time | trr | IF = 30 A, di/dt = 100 A/s | 60 | ns | ||
| Peak Reverse Recovery Current | IRRM | 5 | 8 | A | ||
| Reverse Recovery Charge | Qrr | 0.15 | 0.4 | C | ||
2504180925_VBsemi-Elec-IRL540NSPBF-VB_C5438948.pdf
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