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quality NPN Silicon Power Transistor VISHAY 2N5663 With High Gain And Low Saturation Voltage Characteristics factory
quality NPN Silicon Power Transistor VISHAY 2N5663 With High Gain And Low Saturation Voltage Characteristics factory

NPN Silicon Power Transistor VISHAY 2N5663 With High Gain And Low Saturation Voltage Characteristics

Key Attributes
Model Number: 2N5663
Product Custom Attributes
Current - Collector Cutoff:
1uA
DC Current Gain:
25@500mA,5V
Transition Frequency(fT):
-
Vce Saturation(VCE(sat)):
400mV
Pd - Power Dissipation:
20W
Current - Collector(Ic):
-
Collector - Emitter Voltage VCEO:
300V
Mfr. Part #:
2N5663
Package:
TO-5
Product Description

Product Overview

This document details the technical specifications for the NPN Power Silicon Transistor series, qualified per MIL-PRF-19500/454. These transistors are designed for power applications and are available in various configurations and ratings.

Product Attributes

  • Brand: Microsemi
  • Certifications: Qualified per MIL-PRF-19500/454

Technical Specifications

DeviceCollector-Emitter Voltage (VCEO)Collector-Base Voltage (VCBO)Collector-Emitter Voltage (VCER)Emitter-Base Voltage (VEBO)Base Current (IB)Collector Current (IC)Operating & Storage Junction Temp. Range (Tj, Tstg)Total Power Dissipation (PT) @ TA = +25CTotal Power Dissipation (PT) @ TC = +100CThermal Resistance (RJC)Thermal Resistance (RJA)V(BR)CEO Min.V(BR)CER Min.V(BR)EBO Min.ICES Max.ICBO Max.hFE Min. (IC=50mAdc, VCE=2Vdc)hFE Min. (IC=0.5Adc, VCE=5Vdc)hFE Min. (IC=1.0Adc, VCE=5Vdc)hFE Min. (IC=2.0Adc, VCE=5Vdc)VCE(sat) Max. (IC=1.0Adc, IB=0.1Adc)VCE(sat) Max. (IC=2.0Adc, IB=0.4Adc)VBE(sat) Max. (IC=1.0Adc, IB=0.1Adc)VBE(sat) Max. (IC=2.0Adc, IB=0.4Adc)|hfe| Min. (IC=0.1Adc, VCE=5Vdc, f=10MHz)Cobo Max. (VCB=10Vdc, IE=0, 100kHz-1MHz)Turn-On Time (ton) Typ. (VCC=100Vdc, IC=0.5Adc, IB1=15mAdc)Turn-On Time (ton) Typ. (VCC=100Vdc, IC=0.5Adc, IB1=25mAdc)Turn-Off Time (toff) Typ. (VCC=100Vdc, IC=0.5Adc, IB1=-IB2=15mAdc)Turn-Off Time (toff) Typ. (VCC=100Vdc, IC=0.5Adc, IB1=-IB2=25mAdc)
2N5660200 Vdc250 Vdc250 Vdc6 Vdc0.5 Adc2.0 Adc-65 to +200 C2.0 W20 W5.0 C/W87.5 C/W200 Vdc250 Vdc6.0 Vdc0.2 Adc0.1 Adc4040155.00.4 Vdc0.8 Vdc1.2 Vdc1.5 Vdc2.045 pF0.25 s-0.85 s-
2N5661300 Vdc400 Vdc400 Vdc6 Vdc0.5 Adc2.0 Adc-65 to +200 C2.0 W20 W5.0 C/W87.5 C/W300 Vdc400 Vdc6.0 Vdc0.2 Adc0.1 Adc2525155.00.4 Vdc0.8 Vdc1.2 Vdc1.5 Vdc2.045 pF-0.25 s-1.2 s
2N5662200 Vdc250 Vdc250 Vdc6 Vdc0.5 Adc2.0 Adc-65 to +200 C1.0 W15 W6.7 C/W175 C/W200 Vdc250 Vdc6.0 Vdc0.2 Adc1.0 mAdc4040155.00.4 Vdc0.8 Vdc1.2 Vdc1.5 Vdc7.045 pF0.25 s-0.85 s-
2N5663300 Vdc400 Vdc400 Vdc6 Vdc0.5 Adc2.0 Adc-65 to +200 C1.0 W15 W6.7 C/W175 C/W300 Vdc400 Vdc6.0 Vdc0.2 Adc1.0 mAdc2525155.00.4 Vdc0.8 Vdc1.2 Vdc1.5 Vdc7.045 pF-0.25 s-1.2 s
2N5660U3200 Vdc250 Vdc250 Vdc6 Vdc0.5 Adc2.0 Adc-65 to +200 C2.0 W20 W4.5 C/W-200 Vdc250 Vdc6.0 Vdc0.2 Adc0.1 Adc4040155.00.4 Vdc0.8 Vdc1.2 Vdc1.5 Vdc2.045 pF0.25 s-0.85 s-
2N5661U3300 Vdc400 Vdc400 Vdc6 Vdc0.5 Adc2.0 Adc-65 to +200 C2.0 W20 W4.0 C/W-300 Vdc400 Vdc6.0 Vdc0.2 Adc0.1 Adc2525155.00.4 Vdc0.8 Vdc1.2 Vdc1.5 Vdc2.045 pF-0.25 s-1.2 s

Notes:

(1) Derate linearly 11.4mW/C for TA > +25C

(2) Derate linearly 5.7mW/C for TA > +25C

(3) Derate linearly 200mW/C for TC > +100C

(4) Derate linearly 150mW/C for TC > +100C

(5) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%.


2312181602_VISHAY-2N5663_C5503620.pdf

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