Single Phase Bridge Rectifier VISHAY GBU6K-E3/51 with High Surge Current and Dielectric Strength
Key Attributes
Model Number:
GBU6K-E3/51
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
175A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1V@6A
Current - Rectified:
6A
Voltage - DC Reverse(Vr):
800V
Mfr. Part #:
GBU6K-E3/51
Package:
GBU
Product Description
Product Overview
The Vishay General Semiconductor GBU6A, GBU6B, GBU6D, GBU6G, GBU6J, GBU6K, and GBU6M are single-phase bridge rectifiers designed for general-purpose AC/DC full-wave rectification. These glass-passivated diodes are ideal for printed circuit boards, offering high surge current capability and high case dielectric strength. They are suitable for applications such as monitors, TVs, printers, switching mode power supplies, adapters, audio equipment, and home appliances.
Product Attributes
- Brand: Vishay General Semiconductor
- Certifications: UL recognition file number E54214
- Material: Glass Passivated
- Compliance: RoHS-compliant (E3 suffix), Halogen-free (M3 suffix)
- Flammability Rating: UL 94 V-0
Technical Specifications
| Parameter | Symbol | GBU6A | GBU6B | GBU6D | GBU6G | GBU6J | GBU6K | GBU6M | Unit |
| Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum average forward rectified output current (TC = 90 C) | IF(AV) | 6.0 | A | ||||||
| Maximum average forward rectified output current (TA = 40 C) | IF(AV) | 3.8 | A | ||||||
| Peak forward surge current single sine-wave superimposed on rated load | IFSM | 175 | A | ||||||
| Rating for fusing (t < 8.3 ms) | I2t | 127 | As | ||||||
| Operating junction and storage temperature range | TJ, TSTG | -55 to +150 | C | ||||||
| Maximum instantaneous forward voltage drop per diode (IF = 6.0 A) | VF | 1.0 | V | ||||||
| Maximum DC reverse current per diode (TA = 25 C) | IR | 5.0 | A | ||||||
| Maximum DC reverse current per diode (TA = 125 C) | IR | 500 | A | ||||||
| Typical junction capacitance per diode (VR = 4 V, f = 1 MHz) | CJ | 68 | pF | ||||||
| Typical thermal resistance (Junction to Ambient) | RJA | 20 | C/W | ||||||
| Typical thermal resistance (Junction to Case) | RJC | 2.5 | C/W | ||||||
2410121815_VISHAY-GBU6K-E3-51_C5358615.pdf
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